The BUZ91AF is an N-channel enhancement mode power MOSFET from Siemens (now Infineon Technologies). It is designed for high-voltage, high-speed switching applications. This MOSFET is known for its robust design and ability to handle significant power dissipation.

Applications

• Switching power supplies
• Motor control
• Inverters
• DC-DC converters
• Solid-state relays

Features

• N-Channel Enhancement Mode
• High voltage capability
• Fast switching speeds
• Avalanche rated
• Isolated Mounting Tab

Benefits

• Efficient power conversion due to low on-resistance
• Reliable operation in harsh environments
• Simplified drive circuitry
• Reduced switching losses
• Improved system efficiency

Technical Specifications

The BUZ91AF features a drain-source voltage (Vds) of up to 500V, a continuous drain current (Id) of up to 4.2A, and a pulsed drain current (Idm) of up to 16.8A. It has a gate-source voltage (Vgs) rating of ±20V. The MOSFET exhibits a typical on-resistance (Rds(on)) of 1.8 Ohms at Vgs=10V. It also boasts a total gate charge (Qg) of around 15nC and a power dissipation (Pd) of 80W. The device is typically supplied in a TO-220 package, which allows for efficient heat dissipation.

The BUZ91AF is suitable for applications requiring high voltage and fast switching, making it a reliable choice for various power electronics designs. Its avalanche rating further enhances its robustness in inductive switching applications.