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SPD23N05

Part No SPD23N05
Manufacturer Siemens
Catalog Electronic Wholesale
Description SIPMOS Power Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer Siemens
Win Source Part Number 1257880-SPD23N05
Manufacturer Homepage www.siemens.com/
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPD23N05 CAD Model

Description

The SPD23N05 is an N-Channel Enhancement Mode MOSFET originally manufactured by Siemens, now Infineon Technologies. This MOSFET is designed for efficient power management and switching applications. It is characterized by its low on-resistance and fast switching speed, making it suitable for a wide range of power conversion and control circuits.

Applications:

  • DC-DC Converters: Used in voltage regulation and power conversion circuits.
  • Power Inverters: Converts DC power to AC power.
  • Motor Control: Controls the speed and direction of DC motors.
  • Load Switching: Efficiently switches power to various loads in electronic systems.

Features:

  • Low On-Resistance (RDS(on)): Minimizes power loss and improves efficiency.
  • Fast Switching Speed: Reduces switching losses and enhances overall performance.
  • N-Channel Enhancement Mode: Simplifies gate drive circuitry.
  • Logic Level Gate Drive: Allows direct control from microcontrollers and other logic devices.
  • Avalanche Rated: Provides robustness against voltage transients and inductive kickback.

Benefits:

  • Improved Efficiency: Low RDS(on) reduces power dissipation, leading to higher efficiency.
  • Simplified Circuit Design: Logic level gate drive simplifies the interface with control circuits.
  • Reduced Heat Dissipation: Lower on-resistance results in less heat generation, improving reliability.
  • Robustness: Avalanche rating provides added protection against voltage spikes.
  • Compact Size: Available in standard packages for easy integration.

Additional Details:

The SPD23N05 typically features a drain-source voltage (VDS) of 50V and a continuous drain current (ID) that depends on the operating temperature and package. The gate-source voltage (VGS) is usually rated at ±20V. It is commonly available in a TO-252 or similar surface-mount package for efficient heat dissipation. The RDS(on) value is a critical performance parameter, and it is typically specified in the datasheet for various gate-source voltages. This MOSFET is designed to be RoHS compliant, ensuring it meets environmental regulations. With its combination of low on-resistance, fast switching speed, and robust design, the SPD23N05 is a suitable choice for a variety of power management and switching applications.

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