The SVD2N60DTR is a high-voltage N-channel MOSFET manufactured by Silan. This MOSFET is designed for high-efficiency switching applications and features a fast switching speed and low on-resistance, making it ideal for power supplies, motor control, and lighting applications. Its robust design ensures reliable performance in demanding environments.

Applications

• Switching Power Supplies: Used in AC-DC and DC-DC converters for efficient power conversion.
• Motor Control: Enables precise control of motor speed and torque in various applications.
• LED Lighting: Drives LEDs with high efficiency and reliability in lighting systems.
• DC-DC Converters: Step-up and step-down voltage conversion in portable devices and industrial equipment.
• Power Inverters: Converts DC power to AC power in solar inverters and uninterruptible power supplies (UPS).

Features

• High Voltage: 600V drain-source voltage allows for use in high-voltage applications.
• Low On-Resistance: Reduces power loss and improves efficiency.
• Fast Switching Speed: Enables high-frequency operation in switching circuits.
• Avalanche Ruggedness: Withstands high energy pulses without failure.
• TO-252 Package: Compact and easy to mount on PCBs.

Benefits

• High Efficiency: Low on-resistance minimizes power dissipation, resulting in high efficiency.
• Reliable Performance: Robust design ensures reliable operation in harsh environments.
• Simplified Design: Fast switching speed simplifies the design of switching circuits.
• Compact Size: Small package allows for use in space-constrained applications.
• Cost-Effective: Provides a high-performance solution at a competitive price.

Technical Specifications

The SVD2N60DTR has a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V. The continuous drain current (ID) is 2A, and the pulsed drain current (IDM) is 6A. The on-resistance (RDS(on)) is typically 4.5 ohms at a gate-source voltage of 10V. The gate charge (Qg) is typically 5nC. The device is packaged in a TO-252 package and is RoHS compliant. The operating junction temperature range is -55°C to +150°C. This MOSFET is suitable for applications requiring high voltage and low on-resistance, such as power supplies and motor control circuits. Consult the Silan datasheet for complete specifications and application guidelines. Its avalanche energy rating is 3mJ. This is a surface mount device.