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SI2369DS-T1-BE3

Part No SI2369DS-T1-BE3
Manufacturer Siliconix
Catalog Discrete Semiconductor Products
Description P-CHANNEL 30-V (D-S) MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs
Mfr Vishay Siliconix
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 5.4A (Ta), 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 29mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1295 pF @ 15 V
Power Dissipation (Max) 1.25W (Ta), 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR)Cut Tape (CT)
Ultra Librarian 3D Model Ultra Librarian SI2369DS-T1-BE3 CAD Model

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