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S29AL016J70TFA010

Part No S29AL016J70TFA010
Manufacturer Spansion
Catalog Unclassified Memory
Description IC FLASH 16MBIT PARALLEL 48TSOP  /  FLASH - NOR Memory IC 16Mb (2M x 8, 1M x 16) Parallel 70 ns 48-TSOP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory
Mfr Spansion
Series Automotive, AEC-Q100, AL-J
Package Tray
Product Status Obsolete
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 16Mb (2M x 8, 1M x 16)
Memory Interface Parallel
Write Cycle Time - Word, Page 70ns
Access Time 70 ns
Voltage - Supply 2.7V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting SMD (SMT)
Package / Case 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP
Other Names CYPSPAS29AL016J70TFA010,2156-S29AL016J70TFA010-SP
Standard Package 96
RoHS Status Not applicable
ECCN EAR99
HTSUS 8542.32.0051
Win Source Part Number 1254129-S29AL016J70TFA010
Ultra Librarian 3D Model Ultra Librarian S29AL016J70TFA010 CAD Model

Description

The S29AL016J70TFA010 is a 16-Mbit (2 MB) flash memory device manufactured by Spansion (now Cypress Semiconductor Corp.). It is organized as 2,097,152 x 8 bits. This device features a parallel interface, enabling fast read and write operations. It is typically used for storing code and data in embedded systems.

Applications:

  • Embedded Systems
  • Networking Equipment
  • Industrial Control Systems
  • Consumer Electronics
  • Automotive Systems

Features:

  • 16-Mbit Density: Provides ample storage for code and data.
  • Parallel Interface: Enables fast data transfer rates.
  • 70 ns Access Time: Fast read operations for quick code execution.
  • Sector Erase Architecture: Allows for selective erasure of memory blocks.
  • Single Power Supply: Simplifies system design and reduces power consumption.
  • CMOS Technology: Provides low power operation.

Benefits:

  • Fast Code Execution: Enables quick startup and responsive system performance.
  • Flexible Memory Management: Sector erase architecture allows for efficient memory utilization.
  • Low Power Consumption: Extends battery life in portable applications.
  • High Reliability: Ensures data integrity and long-term storage.
  • Easy Integration: Parallel interface simplifies interfacing with microcontrollers and processors.

Additional Details:

The S29AL016J70TFA010 operates on a single power supply, typically 3.0V or 5.0V, depending on the specific version. It features a sector erase architecture, which allows for selective erasure of memory blocks without affecting other data. The device supports various protection features to prevent accidental programming or erasure. Detailed timing specifications, electrical characteristics, and package information can be found in the product datasheet.

This flash memory device is a suitable choice for applications requiring non-volatile storage of code and data, offering a balance of speed, density, and reliability.

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