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2N5401HR

Part No 2N5401HR
Manufacturer STMicroelectronics
Catalog RF Transistors (BJT)
Description Hi-Rel PNP Bipolar Transistor 150V - 0.5A
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Collector Base Voltage (VCBO) 160 V
Collector Emitter Voltage (VCEO) 150 V
Max Collector Current 600 mA
Maximum Operating Temperature 200 °C
Max Power Dissipation 360 mW
Min Operating Temperature -65 °C
Mount Through Hole
Number of Pins 3
Packaging Bulk
Radiation Hardening Yes
RoHS Non-Compliant
Win Source Part Number 1036406-2N5401HR
Categories RF Transistors(BJT)
Manufacturer STMicroelectronics
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2N5401HR CAD Model

Description

The 2N5401HR from STMicroelectronics is a high-reliability PNP bipolar junction transistor (BJT) designed for aerospace and defense applications. This robust semiconductor device is engineered to meet stringent industry standards, offering exceptional performance in extreme environments.

Key Features

  • High Voltage Capability: The 2N5401HR is capable of withstanding high voltage conditions, with a collector-emitter voltage (V<sub>CEO) of up to 150V, making it suitable for high voltage amplification and switching applications.
  • High Current Performance: It can handle continuous collector current (I<sub>C) up to 600mA, which is ideal for driving moderate loads in electronic circuits.
  • Low Saturation Voltage: The transistor features a low collector-emitter saturation voltage, ensuring efficient operation and reduced power dissipation during saturation.
  • High Reliability: Designed to meet the requirements of aerospace and defense applications, the 2N5401HR undergoes rigorous testing to ensure reliability and performance under harsh conditions.
  • Extended Temperature Range: The device operates over a wide temperature range, from -65°C to +150°C, making it suitable for use in environments with extreme temperatures.

Applications

The 2N5401HR is versatile and can be used in various high-reliability applications, including:

  • Power regulation modules
  • Signal amplification circuits
  • Switching power supplies
  • Linear amplifiers
  • Protection circuits

Quality and Certification

STMicroelectronics is committed to providing products that meet the highest standards of quality and reliability. The 2N5401HR is manufactured in certified facilities, ensuring that it meets the stringent requirements for aerospace and defense industry certifications.

Conclusion

With its robust design, high voltage and current capabilities, and proven reliability, the 2N5401HR PNP transistor is an excellent choice for high-performance, high-reliability applications. STMicroelectronics' commitment to quality ensures that this component will deliver consistent performance and durability for the most demanding electronic designs.

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