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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Status Obsolete
Transistor Type NPN - Darlington
Current - Collector (Ic) (Maximum) 12A
Voltage - Collector Emitter Breakdown (Maximum) 100V
Vce Saturation (Maximum) at Ib, Ic 3V at 120mA, 12A
Current - Collector Cutoff (Maximum) 1mA
DC Current Gain (hFE) (Minimum) at Ic, Vce 750 at 6A, 3V
Maximum Power 150W
Frequency - Transition 4MHz
Temperature Range - Operating 200°C
Mounting Style Chassis Mount
Manufacturer Package TO-204AA, TO-3
Supplier Device Package TO-3
Family Part Number 2N6059
Manufacturer Pack Quantity 20
MSL Level 1 (Unlimited)
Win Source Part Number 1124047-2N6059
Manufacturer Homepage www.mospec.com.tw
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial
Ultra Librarian 3D Model Ultra Librarian 2N6059 CAD Model

Description

The 2N6059 is a robust and reliable power transistor designed and manufactured by STMicroelectronics, a global leader in the semiconductor industry. This transistor is a part of the company's extensive range of power transistors which are widely recognized for their quality, efficiency, and durability.

Key Features

  • Silicon NPN Transistor: The 2N6059 is a Silicon NPN (Negative-Positive-Negative) transistor, which is commonly used in high-power switching applications.
  • High Power Dissipation: With an exceptional ability to dissipate power, this transistor can handle significant amounts of power, making it suitable for a wide range of demanding applications.
  • High Current Handling: This device is capable of conducting high levels of current without degradation of performance, ensuring reliability in high-load situations.
  • Complementary PNP Type: The 2N6059 has a complementary PNP type transistor, allowing for flexibility in various circuit designs and applications.
  • Versatile Applications: It is ideal for use in power amplifiers, switching regulators, motor control systems, and other high-power circuits.

Technical Specifications

Parameter Value Collector-Emitter Voltage (V<sub>CEO) 60 V Collector Current (I<sub>C) 8 A Total Power Dissipation (P<sub>T) 75 W Operating Junction Temperature (T<sub>J) -65 to 200°C Package TO-3

The 2N6059 is housed in a TO-3 package, known for its high thermal efficiency and robustness, making it an excellent choice for applications requiring a high level of mechanical stability and heat dissipation.

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The 2N6059 is built with the highest standards of quality and reliability, ensuring that it meets the stringent requirements of industrial and consumer applications alike. With its proven performance and backed by ST's expertise, this power transistor is a go-to component for engineers and designers looking for a dependable solution.

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