The 2N6547 is a high power NPN bipolar junction transistor (BJT) designed and manufactured by STMicroelectronics, a global semiconductor leader known for its innovative and reliable components. This transistor is specifically engineered to handle high voltage and current, making it an ideal choice for a wide range of power amplification and switching applications.

Key Features

• Voltage Capabilities: It can handle collector-emitter voltages up to 350V, providing ample headroom for high voltage circuit designs.
• Current Handling: With a continuous collector current rating of up to 15A, the 2N6547 can drive significant loads without overheating.
• Power Dissipation: It boasts a high power dissipation capability of 175W, allowing it to manage substantial power levels in electronic circuits.
• High Transition Frequency: The device features a transition frequency (fT) of 4MHz, making it suitable for high-frequency operations.
• Robustness: The transistor is encapsulated in a TO-3 metal case, ensuring excellent heat dissipation and mechanical durability.

Applications

The 2N6547 is versatile and can be used in a variety of electronic circuits. Common applications include:

• Power supply regulators
• Motor control circuits
• Audio amplifiers
• Switching applications
• High voltage inverters

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The 2N6547, like all ST components, is subjected to rigorous testing and quality control procedures to ensure it meets the stringent requirements of industrial and consumer applications. Designers can rely on this transistor for consistent performance and long-term reliability.

Environmental Compliance

The 2N6547 is designed with environmental considerations in mind. STMicroelectronics is dedicated to producing eco-friendly products, and this transistor complies with various international environmental standards, contributing to the sustainability of electronic products.