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B141NF55-1

Part No B141NF55-1
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A I2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 142nC @ 10V
Max Input Capacitance 5300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 079364-B141NF55-1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian B141NF55-1 CAD Model

Description

STMicroelectronics B141NF55-1 Power MOSFET

The B141NF55-1 is a high-performance Power MOSFET brought to you by STMicroelectronics, a leader in semiconductor solutions. This component is designed to meet the stringent requirements of modern electronic circuits, offering high efficiency and reliability for a wide range of applications.

Key Features

  • Low On-Resistance: The B141NF55-1 boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in power conversion applications.
  • High Switching Speed: This MOSFET is capable of high-speed switching, making it an ideal choice for high-frequency applications, such as switch-mode power supplies and DC-DC converters.
  • Enhanced Thermal Performance: With an optimized package design, the B141NF55-1 offers excellent thermal performance, ensuring stability and long-term reliability even under high-temperature operating conditions.
  • Robustness: The device is engineered to withstand harsh environments and is characterized by its high ruggedness, providing protection against overcurrent and thermal overload events.

Applications

The versatility of the B141NF55-1 allows it to be used in a variety of applications, including:

  • Power Management Solutions
  • Automotive Systems
  • Industrial Automation
  • Solar Inverters
  • Uninterruptible Power Supplies (UPS)

Technical Specifications

The B141NF55-1 Power MOSFET features the following technical specifications:

  • Drain-source Voltage (V<sub>DS): 55V
  • Continuous Drain Current (I<sub>D): 141A
  • Power Dissipation (P<sub>D): 280W
  • Operating Temperature Range: -55°C to 175°C

For detailed information, designers and engineers are encouraged to consult the datasheet and supporting technical documentation available on the STMicroelectronics website. The B141NF55-1 is a testament to STMicroelectronics' commitment to providing advanced electronic components that drive innovation and enable efficient energy management across a broad spectrum of industries.

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