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BCY59IX

Part No BCY59IX
Manufacturer STMicroelectronics
Catalog Transistors (BJT) - Single
Description TRANS NPN 45V 0.2A TO18
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr STMicroelectronics
Package Bulk
Product Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 200 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max) 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2mA, 5V
Power - Max 390 mW
Frequency - Transition 200MHz
Temperature Range - Operating 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Supplier Device Package TO-18
Base Product Number BCY59
Standard Package 1,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 569813-BCY59IX
Ultra Librarian 3D Model Ultra Librarian BCY59IX CAD Model

Description

The BCY59IX is a high-quality NPN bipolar junction transistor (BJT) developed by STMicroelectronics, a global semiconductor leader renowned for its innovative and reliable components. This particular transistor is designed for general-purpose switching and amplification applications, making it a versatile component suitable for a wide range of electronic circuits.

Key Features:

  • High Current Gain Bandwidth Product: The BCY59IX boasts a high transition frequency, which provides excellent performance in amplification applications, where bandwidth is a critical factor.
  • Low Saturation Voltage: The low V<sub>CE(sat) ensures efficient operation at low voltages, which helps in reducing power consumption and improving overall efficiency in electronic designs.
  • Robust Thermal Performance: With its superior thermal characteristics, the BCY59IX can sustain stable operation even under high temperature environments, which is crucial for reliability and longevity.

Applications:

The BCY59IX is ideal for a host of applications, including but not limited to:

  • Audio amplifiers and pre-amplifiers
  • Signal processing
  • Switching circuits
  • Driver stages in hi-fi systems and televisions
  • Linear amplification and switching

Technical Specifications:

Parameter Value Collector-Emitter Voltage (V<sub>CEO) 30V Collector-Base Voltage (V<sub>CBO) 60V Emitter-Base Voltage (V<sub>EBO) 5V Collector Current (I<sub>C) 100mA Power Dissipation (P<sub>D) 300mW Operating Junction Temperature (T<sub>j) -55°C to +175°C

In conclusion, the BCY59IX from STMicroelectronics is an exceptional NPN transistor that provides robust performance for a plethora of electronic applications. Its high bandwidth, low saturation voltage, and strong thermal performance make it a reliable choice for designers and engineers looking to build efficient and durable electronic systems.

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