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M29W040B70N1

Part No M29W040B70N1
Manufacturer STMicroelectronics
Catalog Flash
Description IC FLASH 4MBIT 70NS 32TSOP
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits
Manufacturer STMicroelectronics
Packaging Tray
Status Obsolete(EOL)
Memory Format FLASH
Technology FLASH - NOR
Memory Size 4Mb (512K x 8)
Access Time 70ns
Supply Voltage - Operating 2.7 V to 3.6 V
Temperature Range - Operating 0°C to 70°C (TA)
Mounting SMD (SMT)
Case / Package 32-TSOP
Win Source Part Number 072853-M29W040B70N1
Family Name M29W040B
Introduction Date March 23, 1998
ECCN EAR99
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian M29W040B70N1 CAD Model

Description

STMicroelectronics M29W040B70N1 Flash Memory

The M29W040B70N1 is a high-speed 4 Mbit (4,194,304 bits) Flash memory device from STMicroelectronics, renowned for its reliability and performance. This non-volatile memory product offers a density of 4 Megabits, organized as 512K bytes of 8 bits each. The M29W040B70N1 is an ideal choice for applications requiring data and program storage, such as in embedded systems, automotive electronics, and a variety of industrial devices.

One of the key features of the M29W040B70N1 is its fast read access time of 70ns, which ensures quick data retrieval, enhancing the overall performance of systems in which it is integrated. Furthermore, this Flash memory chip supports a standard 5V±10% supply voltage, making it compatible with many existing designs without the need for additional power management components.

The M29W040B70N1 employs a sophisticated memory architecture that allows byte and word operations, providing designers with flexibility in data management. The programming of the device can be performed either in the standard byte-wide or word-wide (x16) modes, which simplifies the integration process with various microcontrollers and microprocessors.

STMicroelectronics has designed the M29W040B70N1 with a robust set of features to ensure data integrity and reliability. The device includes a status register that provides details on the program or erase cycle completion, which is crucial for implementing error checking and correction algorithms. In addition, the Flash memory supports a high number of program/erase cycles, making it a durable choice for applications that require frequent data updates.

The M29W040B70N1 also offers flexible erase capabilities, with both chip erase and sector erase options available. This allows for efficient memory management by enabling the erasure of specific sections of memory without affecting the rest of the data stored on the chip.

In summary, the STMicroelectronics M29W040B70N1 Flash memory combines speed, flexibility, and reliability, making it an excellent choice for a wide range of applications that require non-volatile memory solutions. Its industry-standard packaging and pinout ensure easy integration into existing designs, simplifying the development process for engineers and product designers.

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