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MJD122-1

Part No MJD122-1
Manufacturer STMicroelectronics
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 100V 8A TO251 / Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 20 W Through Hole TO-251 (IPAK)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr STMicroelectronics
Package Bulk
Product Status Active
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 8 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 4V @ 80mA, 8A
Current - Collector Cutoff (Max) 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A, 4V
Power - Max 20 W
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package TO-251 (IPAK)
Base Product Number MJD122
Standard Package 75 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 850617-MJD122-1
Ultra Librarian 3D Model Ultra Librarian MJD122-1 CAD Model

Description

The MJD122-1 from STMicroelectronics is a robust and versatile NPN Darlington power transistor designed for general-purpose amplifier and low-speed switching applications. This power transistor is a part of the MJD series, which is well-known for its high current gain and high collector current capabilities. The MJD122-1 is particularly suitable for applications requiring high load currents and direct interfacing with microcontrollers and other logic-level devices.

Key Features

  • High Collector-Emitter Sustaining Voltage: The transistor can withstand up to 100V across the collector-emitter junction, making it suitable for high voltage applications.
  • High Collector Current: With a continuous collector current rating of up to 8A, the MJD122-1 can drive substantial loads, making it ideal for power regulation and actuation tasks.
  • High DC Current Gain: The device features a high DC current gain (hFE) of 1000 (minimum) at 4A, which allows for significant amplification of input signals.
  • Monolithic Construction with Built-in Base-Emitter Speed-up Diode: This integrated feature improves switching speed and reduces losses, enhancing overall performance.
  • Complementary PNP Type: The MJD122-1 has a complementary PNP partner, the MJD127-1, which allows designers to implement push-pull configurations for more efficient power control.
  • TO-252 (DPAK) Surface-Mount Package: The compact and efficient packaging is suitable for automated assembly processes and helps to save space on printed circuit boards.

Applications

The MJD122-1 is well-suited for a wide range of applications, including:

  • Linear and switched mode power supplies
  • Motor control circuits
  • Audio amplifiers
  • Relay and solenoid drivers
  • LED drivers
  • Other switching applications requiring high current and/or high voltage

With its high reliability and performance, the MJD122-1 is an excellent choice for designers looking to create robust and efficient electronic systems. STMicroelectronics' commitment to quality ensures that the MJD122-1 meets the rigorous demands of modern electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6676 $60.0840
215+ $0.5479 $117.7985
330+ $0.5308 $175.1640
450+ $0.5137 $231.1650
585+ $0.4964 $290.3940
780+ $0.4451 $347.1780
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,810 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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