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P11NM60FDFP

Part No P11NM60FDFP
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 900pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 450 mOhm @ 5.5A, 10V
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 209550-P11NM60FDFP
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian P11NM60FDFP CAD Model

Description

STMicroelectronics P11NM60FDFP Product Overview

The P11NM60FDFP is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This MOSFET is part of STMicroelectronics' MDmesh™ series, which is renowned for its excellent energy efficiency and thermal performance. The device is designed to handle high current and voltage efficiently, making it suitable for a wide range of power applications.

Key Features

  • High Voltage Capability: The P11NM60FDFP is capable of sustaining a drain-source voltage (V<sub>DS) of up to 600V, which is ideal for high-voltage switching applications.
  • Low On-Resistance: With a low on-resistance (R<sub>DS(on)), this MOSFET ensures minimal power loss and heat generation during operation, contributing to the overall efficiency of the system.
  • Fast Switching Speed: The fast switching characteristics of the P11NM60FDFP make it suitable for applications requiring quick response times, such as SMPS (Switched-Mode Power Supplies) and high-frequency converters.
  • High Current Capacity: This device can handle continuous drain currents (I<sub>D), making it a robust choice for demanding power applications.
  • Enhanced Body Diode: The MOSFET comes with an intrinsic fast-recovery body diode that offers improved performance during reverse recovery operations.

Applications

The versatility of the P11NM60FDFP makes it suitable for a variety of applications, including:

  • Power supply units
  • LED lighting systems
  • High-efficiency DC/DC converters
  • Motor control circuits
  • Inverters for renewable energy sources
  • Electronic ballasts for fluorescent lighting

Package and Quality Assurance

The P11NM60FDFP is housed in a TO-220FP package, which is known for its durability and excellent thermal conduction. This package allows for efficient heat dissipation, ensuring the device operates within its specified temperature range even under high power conditions. STMicroelectronics is committed to delivering high-quality products, and the P11NM60FDFP is no exception, adhering to stringent quality control standards and reliability testing to ensure performance and durability.

With its combination of high-voltage capability, low on-resistance, fast switching, and high current capacity, the P11NM60FDFP is an excellent choice for designers looking to improve the efficiency and reliability of their power management systems.

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