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SCT10N120

Part No SCT10N120
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 1200V 12A HIP247 / N-Channel 1200 V 12A (Tc) 150W (Tc) Through Hole HiP247™
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer STMicroelectronics
Packaging Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 690mOhm @ 6A, 20V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 20 V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 400 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 200°C (TJ)
Mounting Through Hole
Supplier Device Package HiP247™
Case / Package TO-247-3
Base Product Number SCT10
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 497-16597-5
Standard Package 100
Win Source Part Number 1325334-SCT10N120
Ultra Librarian 3D Model Ultra Librarian SCT10N120 CAD Model

Description

The SCT10N120 from STMicroelectronics is a state-of-the-art silicon carbide (SiC) Power MOSFET, designed to deliver high efficiency, reduced losses, and improved thermal management in a wide range of applications. This device is part of ST's advanced SiC Power MOSFETs portfolio and is ideal for high-performance power conversion systems.

Key Features

  • High Voltage Capability: With a drain-source voltage (V<sub>DS) of 1200V, the SCT10N120 is well-suited for high voltage applications, providing excellent power density and reliability.
  • Low On-Resistance: The MOSFET features an on-resistance (R<sub>DS(on)) as low as 0.28 ohms, which significantly reduces conduction losses and improves overall efficiency.
  • Fast Switching Speed: The fast intrinsic diode with minimal reverse recovery time (t<sub>rr) ensures high-speed switching, reducing switching losses and enabling high-frequency operation.
  • High-Temperature Operation: Capable of operating at junction temperatures up to 200°C, the SCT10N120 is suitable for demanding environments and applications requiring high thermal endurance.

Applications

The SCT10N120 is versatile and can be used in various applications, such as:

  • Electric vehicle (EV) chargers
  • Solar inverters
  • Switched-mode power supplies (SMPS)
  • Power factor correction (PFC) circuits
  • Induction heating systems
  • High-performance motor drives

Advantages

Adopting the SCT10N120 in your power conversion systems comes with numerous benefits:

  • Energy Savings: The low on-resistance and fast switching capabilities lead to reduced power losses, translating into higher energy savings for end-users.
  • Compact Design: The high voltage and current handling capabilities allow for smaller component sizes, reducing the overall footprint of power modules.
  • Longevity: The robustness and thermal performance of SiC technology extend the lifespan of the power systems in which the SCT10N120 is used.

As a leader in SiC technology, STMicroelectronics' SCT10N120 represents a significant leap forward in power electronics, offering designers the ability to create more efficient, compact, and reliable power systems for a sustainable, electrified future.

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $8.2050 $57.4350
15+ $6.7324 $100.9860
23+ $6.5220 $150.0060
32+ $6.3116 $201.9712
41+ $6.1012 $250.1492
55+ $5.4700 $300.8500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,500 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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