The SCTWA90N65G2V-4 is a state-of-the-art silicon carbide (SiC) power MOSFET brought to you by STMicroelectronics, a global semiconductor leader. This device is designed to meet the high-efficiency and high-performance requirements of modern power applications, including electric vehicles, solar inverters, and other energy-efficient systems.

Key Features

• High Voltage Capability: With a drain-source voltage (V<sub>DS) of 650V, this MOSFET can handle high voltage applications with ease, providing a margin for safety and reliability.
• Low On-Resistance: The SCTWA90N65G2V-4 boasts an ultra-low on-resistance (R<sub>DS(on)) of 90 mΩ, which translates to reduced conduction losses and improved efficiency.
• High Current Capacity: It supports a continuous drain current (I<sub>D) of up to 4A, making it suitable for high-power applications.
• Fast Switching Speed: The fast intrinsic diode with minimal reverse recovery charge (Q<sub>rr) ensures swift switching, reducing switching losses and enhancing overall performance.
• High-Temperature Operation: The SCTWA90N65G2V-4 is capable of operating at junction temperatures (T<sub>j) up to 175°C, ensuring reliability even in extreme conditions.

Applications

• Electric Vehicle (EV) Inverters
• Renewable Energy Systems
• Power Supply Units (PSUs)
• High-Performance Computing
• Industrial Motor Drives

The SCTWA90N65G2V-4 is housed in a HiP247 package, which is designed for optimal thermal performance and ease of mounting. Its robust design and advanced SiC technology make it an ideal choice for designers looking to improve the efficiency, thermal management, and power density of their systems.

By integrating the SCTWA90N65G2V-4 into your design, you can expect lower system costs, reduced size and weight of power converters, and an overall increase in system reliability. STMicroelectronics' commitment to quality and innovation ensures that the SCTWA90N65G2V-4 is a product that will drive your applications into the future.