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STB10N65K3

Part No STB10N65K3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Very low intrinsic capacitances
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series SuperMESH3
Packaging Reel - TR
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs 42nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1180pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 150W (Tc)
Rds On (Maximum) @ Id, Vgs 1 Ohm @ 3.6A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package D2PAK
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1260578-STB10N65K3
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STB10N65K3
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian STB10N65K3 CAD Model

Description

STB10N65K3 - N-channel 650 V, 0.68 Ohm typ., 10 A MDmesh™ K3 Power MOSFET in D²PAK Package

The STB10N65K3 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, designed using the innovative MDmesh™ K3 technology. This technology is centered around a proprietary vertical structure, which ensures an optimal balance of on-resistance, switching performance, and ruggedness. The STB10N65K3 is tailored for a wide array of high-efficiency applications, particularly those demanding high voltage and current handling capabilities.

With a drain-source voltage (V<sub>DS) of 650 V, the STB10N65K3 is well-suited for systems that require reliable operation under high voltage conditions. The device features a low on-resistance (R<sub>DS(on)) of just 0.68 Ohm typical, which contributes to its high efficiency by minimizing conduction losses. The 10 A continuous drain current (I<sub>D) capacity of the MOSFET enables it to handle significant power without overheating, making it an excellent choice for power supply units, lighting applications, and high-performance converters.

The STB10N65K3 comes in a robust and compact D²PAK package, which not only provides excellent thermal performance but also allows for a simplified PCB layout. This package is widely recognized for its ability to handle high power levels and its ease of mounting on a wide range of circuit boards.

Key features of the STB10N65K3 include:

  • 650 V drain-source breakdown voltage (V<sub>BRDSS)
  • Low threshold voltage (V<sub>GS(th))
  • Low gate charge (Q<sub>g) for faster switching
  • High avalanche ruggedness, ensuring durability against repetitive stress

STMicroelectronics has also integrated Zener-protection on the gate, providing enhanced ESD robustness and eliminating the need for external protection circuits in most cases. The STB10N65K3 is designed to meet the stringent requirements of modern electronic designs, offering both performance and reliability for engineers looking to optimize their power management solutions.

Whether it's for industrial applications, renewable energy systems, or consumer electronics, the STB10N65K3 from STMicroelectronics delivers the performance and efficiency needed for today's high-voltage power conversion challenges.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7703 $61.9605
80+ $1.4525 $116.2000
125+ $1.4072 $175.9000
170+ $1.3617 $231.4890
220+ $1.3164 $289.6080
295+ $1.1802 $348.1590
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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