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STB11NK50ZT4

Part No STB11NK50ZT4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 10A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 100μA
Max Gate Charge 68nC @ 10V
Max Input Capacitance 1390pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 520 mOhm @ 4.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 031059-STB11NK50ZT4
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STB11NK50ZT4 CAD Model

Description

The STB11NK50ZT4 is a high-performance N-Channel MOSFET from STMicroelectronics, designed to deliver the efficiency and reliability required for advanced power conversion applications. This MOSFET is part of STMicroelectronics' MDmesh™ technology, which utilizes an innovative vertical process that combines a high voltage breakdown with low on-resistance, making the STB11NK50ZT4 ideal for a wide range of high voltage applications.

Key Features

  • High Voltage Capability: The device is capable of handling up to 500V, making it suitable for high voltage switching applications.
  • Low On-Resistance (R<sub>DS(on)): With an on-resistance as low as 0.38 Ohm, the STB11NK50ZT4 ensures minimal power loss during operation, which is critical for efficiency.
  • High Current Rating: This MOSFET can support a continuous drain current of up to 11A, allowing it to handle significant power levels.
  • Fast Switching Speed: The device's fast switching characteristics are suitable for high-frequency power converters and other applications requiring rapid switching.
  • 100% Avalanche Tested: Each unit is tested for reliability in the event of an avalanche, ensuring robust performance under stress conditions.
  • Low Gate Charge (Q<sub>g): A low gate charge facilitates faster switching and reduced driving power.
  • Improved dv/dt Capability: The MOSFET is designed to withstand high voltage transients, providing stable operation in inductive load environments.

Applications

The STB11NK50ZT4 is suitable for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • High-Efficiency DC/DC Converters
  • Motor Control Applications
  • Power Management Functions
  • LED Lighting Solutions
  • Uninterruptible Power Supplies (UPS)

Quality and Reliability

STMicroelectronics is known for its commitment to quality and reliability. The STB11NK50ZT4 is manufactured to meet the highest industry standards, ensuring long-term reliability for critical applications. Its robust design and comprehensive testing guarantee performance even under the most demanding conditions.

Whether you are designing power supplies, motor controllers, or advanced power management systems, the STB11NK50ZT4 offers the performance and reliability needed to optimize your solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.6195 $52.3900
47+ $2.1493 $101.0171
73+ $2.0821 $151.9933
100+ $2.0150 $201.5000
129+ $1.9478 $251.2662
172+ $1.7463 $300.3636
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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