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STB11NM80T4

Part No STB11NM80T4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 11A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 43.6nC @ 10V
Max Input Capacitance 1630pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 400 mOhm @ 5.5A, 10V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 005205-STB11NM80T4
Family Name STB11NM80
Introduction Date March 23, 1998
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STB11NM80T4 CAD Model

Description

The STB11NM80T4 is a state-of-the-art N-channel 800V MDmesh™ DM2 Power MOSFET manufactured by STMicroelectronics. This device boasts a unique design that combines the benefits of reduced on-resistance, high dv/dt capability, and fast switching speed, making it an ideal choice for a wide range of high-efficiency applications.

Key Features

  • Voltage Rating: With an 800V drain-source voltage (VDS), the STB11NM80T4 is well-suited for high-voltage applications, ensuring robust performance even under stressful conditions.
  • Low On-Resistance: The device features an extremely low on-resistance (RDS(on)), which translates to reduced conduction losses and improved overall efficiency in power conversion systems.
  • High dv/dt Capability: Its high dv/dt rating allows for fast switching, which is critical in reducing switching losses and improving performance in applications such as switch-mode power supplies and LED lighting drivers.
  • MDmesh™ DM2 Technology: Leveraging STMicroelectronics' proprietary MDmesh DM2 technology, the STB11NM80T4 offers a perfect blend of low gate charge (Qg), low crss / ciss ratio, and optimized capacitance profile for high-frequency applications.

Applications

The STB11NM80T4 is versatile and can be used in a variety of applications, including:

  • Switch-mode power supplies (SMPS)
  • LED lighting solutions
  • High-efficiency DC-DC converters
  • Power adapters and chargers
  • Welding equipment
  • Solar inverters
  • Electric vehicle charging stations

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The STB11NM80T4 is no exception, with its design and manufacturing processes tailored to ensure reliability and performance over a wide temperature range, making it suitable for industrial-grade applications.

Environmental Compliance

The STB11NM80T4 complies with the RoHS directive, which restricts the use of certain hazardous substances in electronic equipment. This compliance reflects STMicroelectronics' dedication to environmental sustainability and the production of eco-friendly products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.9178 $58.7670
36+ $3.2144 $115.7184
56+ $3.1139 $174.3784
77+ $3.0134 $232.0318
100+ $2.9129 $291.2900
133+ $2.6115 $347.3295
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,327 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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