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STB12NM50T4

Part No STB12NM50T4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 550V 12A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 550V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 50μA
Max Gate Charge 39nC @ 10V
Max Input Capacitance 1000pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 350 mOhm @ 6A, 10V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 031062-STB12NM50T4
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STB12NM50T4 CAD Model

Description

STB12NM50T4 - N-Channel 500V - 0.35 ohm - 11A MDmesh™ Power MOSFET

The STB12NM50T4 is a state-of-the-art N-Channel Power MOSFET presented by STMicroelectronics, designed to offer superior performance in a wide range of electronic applications. It integrates the company's advanced MDmesh™ technology, which is renowned for its excellent on-state resistance (RDS(on)) characteristics at high voltages, thereby ensuring high levels of efficiency and reliability.

This Power MOSFET operates at a drain-source voltage (VDS) of 500V, making it an ideal choice for high voltage applications. It features a low on-state resistance of just 0.35 ohms, which minimizes conduction losses and improves overall system efficiency. With a continuous drain current (ID) of 11A, the STB12NM50T4 is capable of handling significant power without compromising performance.

The device comes in a surface-mount D2PAK package, which is designed to offer high power dissipation and a compact footprint. This makes it suitable for use in space-constrained applications while still providing the necessary thermal performance for reliability under high-power conditions.

One of the key advantages of the STB12NM50T4 is its fast switching speed, which is crucial for applications that require high frequency operation. This, combined with its low gate charge (Qg), allows for efficient operation at higher switching frequencies, reducing energy losses during the switching process and improving the performance of power conversion systems.

The device is also characterized by its Zener-protected gate, which provides enhanced protection against overvoltage, making it more robust in harsh electrical environments. This feature is particularly important in applications that are susceptible to voltage spikes or surges, ensuring the longevity and stability of the component.

In summary, the STB12NM50T4 from STMicroelectronics is a highly efficient and reliable Power MOSFET that is suitable for a variety of high voltage applications, including Switch Mode Power Supplies (SMPS), lighting applications, DC-AC converters, motor control, and other power management tasks. Its integration of MDmesh™ technology, low on-state resistance, and fast switching capabilities make it a leading choice for designers seeking to optimize their power systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3073 $50.7606
53+ $1.8932 $100.3396
82+ $1.8340 $150.3880
113+ $1.7748 $200.5524
146+ $1.7157 $250.4922
196+ $1.5382 $301.4872
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,680 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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