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STB160NF3LLT4

Part No STB160NF3LLT4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series STripFET™ III
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 4.5 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Mounting SMD (SMT)
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number STB160N
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278001-STB160NF3LLT4
Ultra Librarian 3D Model Ultra Librarian STB160NF3LLT4 CAD Model

Description

The STB160NF3LLT4 is a high-performance, N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This MOSFET is part of ST's STripFET™ III series, which is renowned for its low on-state resistance and high switching performance. The STB160NF3LLT4 is designed to meet the rigorous demands of a wide range of power applications, offering an optimal balance between efficiency and reliability.

Key Features:

  • Low Threshold Drive: The device can be driven at lower gate voltages, making it suitable for low-voltage applications and enabling efficient power management.
  • High Current Capability: With a continuous drain current of up to 120A, the STB160NF3LLT4 is capable of handling high current loads, making it ideal for high-power applications.
  • Low On-Resistance (R<sub>DS(on)): The low on-state resistance of this MOSFET minimizes conduction losses and improves overall efficiency, which is crucial for power-sensitive designs.
  • 100% Avalanche Tested: Each device is rigorously tested for avalanche performance, ensuring reliability and robustness in applications where the MOSFET is exposed to high-energy pulses.
  • High Switching Speed: The fast switching characteristics of the STB160NF3LLT4 reduce switching losses and improve performance in high-frequency applications.

Applications:

The versatility of the STB160NF3LLT4 allows it to be used in a diverse array of applications, including:

  • Switching regulators
  • DC-DC converters
  • Motor control circuits
  • Power management systems
  • Automotive applications

With its combination of low on-resistance, high current handling, and fast switching speeds, the STB160NF3LLT4 from STMicroelectronics is a robust and efficient solution for designers looking to optimize the power performance in their electronic systems. Its compact footprint and robust design make it a preferred choice for engineers aiming to achieve higher power density and reliability in their products.

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