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IPD06N03LA

Part No IPD06N03LA
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 50A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 40μA
Max Gate Charge 22nC @ 5V
Max Input Capacitance 2653pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 5.7 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 094706-IPD06N03LA
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD06N03LA CAD Model

Description

The Infineon Technologies 094706-IPD06N03LA is a high-quality MOSFET component designed for use in discrete semiconductor products.

  • Type: N-Channel MOSFET
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 50A (Tc) @ 25°C
  • Power Dissipation: 83W (Tc)
  • Gate-Source Threshold Voltage: 2V @ 40μA
  • Maximum Gate Charge: 22nC @ 5V
  • Rds On: 5.7 mOhm @ 30A, 10V
  • Package: PG-TO252-3
  • Mounting: SMD (SMT) technology
  • Applications: power supplies, motor control, and lighting

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Pricing & Ordering

Quantity Unit Price Ext. Price
385+ $0.1513 $58.2505
930+ $0.1247 $115.9710
1,430+ $0.1213 $173.4590
1,985+ $0.1167 $231.6495
2,555+ $0.1132 $289.2260
3,410+ $0.1016 $346.4560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,500 pieces
MOQ: 385 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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