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STB200NF04L-1

Part No STB200NF04L-1
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 120A I2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 90nC @ 4.5V
Max Input Capacitance 6400pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 3.8 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1102776-STB200NF04L-1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STB200NF04L-1 CAD Model

Description

The STB200NF04L-1 is a high-performance N-channel power MOSFET designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This MOSFET is part of STMicroelectronics' STripFET™ series, which is known for its low on-state resistance and high switching performance. The STB200NF04L-1 is an ideal choice for a wide range of applications, including switch-mode power supplies, DC-DC converters, motor control, and general-purpose switching applications.

Key Features

  • Low On-Resistance: The STB200NF04L-1 boasts an exceptionally low on-resistance (R<sub>DS(on)) of just 4.7 mΩ at V<sub>GS = 10 V, which results in reduced conduction losses and improved power efficiency.
  • High Current Capability: With a continuous drain current (I<sub>D) of up to 120 A, this MOSFET can handle high current applications with ease.
  • High Voltage Threshold: The device can withstand drain-source voltages (V<sub>DSS) up to 40 V, providing a good safety margin for a variety of electronic designs.
  • Low Gate Charge: A low gate charge (Q<sub>g) ensures fast switching performance, which is crucial for high-frequency power switching applications.
  • 100% Avalanche Tested: Guarantees robustness and reliability of the MOSFET by ensuring it can withstand high-energy pulses.

Applications

The versatility of the STB200NF04L-1 MOSFET makes it suitable for a variety of applications:

  • Power management in computing and telecom systems
  • High-efficiency DC/AC converters
  • Motor drives and inverters
  • Synchronous rectification
  • Automotive applications and more

Quality and Environmental Compliance

The STB200NF04L-1 is not only powerful but also environmentally friendly. It is compliant with RoHS and Halogen-free standards, ensuring that it meets global environmental regulations and can be used in green applications.

Summary

In summary, the STB200NF04L-1 from STMicroelectronics is a robust and efficient N-channel MOSFET that offers low on-resistance, high current capability, and fast switching performance. Its compliance with international standards and its ability to withstand harsh conditions make it a reliable choice for designers looking to enhance the performance and efficiency of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.1291 $57.8074
35+ $3.3888 $118.6080
53+ $3.2825 $173.9725
73+ $3.1763 $231.8699
95+ $3.0711 $291.7545
126+ $2.7535 $346.9410
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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