STB21N90K5 - N-Channel 900V - 0.19 ohm - 21A MDmesh™ K5 Power MOSFET

The STB21N90K5 is a high-performance N-channel Power MOSFET from STMicroelectronics, which is part of their MDmesh™ K5 series. This device is designed to meet the stringent requirements of power conversion and switching applications. It is particularly well-suited for high-efficiency solutions in a wide range of applications, including switch-mode power supplies, lighting, welding, and high-frequency converters.

With a drain-source voltage (V<sub>DS) of 900V, the STB21N90K5 provides a robust solution for circuits that experience high voltage stress. The MOSFET's low on-resistance (R<sub>DS(on)) of 0.19 ohm minimizes conduction losses, thus enhancing overall system efficiency. Additionally, the device can handle a continuous drain current (I<sub>D) of 21A, making it capable of powering a wide range of high-current applications.

The MDmesh™ K5 technology utilized in the STB21N90K5 is known for its excellent switching performance. This technology combines a vertical structure with a new proprietary strip layout to yield one of the industry's lowest on-resistance and gate charge, which are critical parameters for reducing switching losses in power electronic devices.

Other notable features of the STB21N90K5 include its 100% avalanche tested design, which ensures reliability in harsh conditions, and its Zener-protected gate, which provides enhanced protection against overvoltage. The device is also designed to be compatible with high switching frequency operations, which allows for smaller and more efficient power supply designs.

The STB21N90K5 comes in a D2PAK package, which is suitable for compact layouts and ensures good heat dissipation. Its lead-free, halogen-free design is in compliance with environmental regulations, making it a sustainable choice for eco-friendly applications.

Whether you're designing an energy-saving power supply or a robust industrial system, the STB21N90K5 from STMicroelectronics offers the performance, efficiency, and reliability required to meet the demands of today's power electronic circuits.