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STB28N65M2

Part No STB28N65M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 20A D2PAK  /  N-Channel 650 V 20A (Tc) 170W (Tc) Surface Mount D²PAK (TO-263)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ M2
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1440 pF @ 100 V
Power Dissipation (Max) 170W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number STB28
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-15456-6,497-15456-2,497-15456-1
Standard Package 1,000
Win Source Part Number 1166260-STB28N65M2
Ultra Librarian 3D Model Ultra Librarian STB28N65M2 CAD Model

Description

The STB28N65M2 from STMicroelectronics is a high-performance, N-channel Power MOSFET designed to deliver efficiency and reliability for a wide range of applications. This advanced MDmesh™ II Plus low Qg MOSFET is a testament to STMicroelectronics' commitment to providing state-of-the-art power conversion solutions.

Key Features

  • Voltage Rating: The device boasts a robust 650V drain-source voltage (V<sub>DS), making it suitable for high-voltage applications.
  • Low On-Resistance: With an on-resistance (R<sub>DS(on)) of only 0.165 ohms, the STB28N65M2 ensures minimal power loss and improved efficiency.
  • High Current Capability: It can handle a continuous drain current (I<sub>D) of up to 21A, providing ample current for demanding loads.
  • Reduced Gate Charge: A low gate charge (Qg) helps in achieving high switching speeds, which is critical for power efficiency and reducing switching losses.
  • Enhanced Ruggedness: The MOSFET's 100% avalanche tested design ensures reliability and robustness in harsh conditions.
  • Zener-protected: The gate-source is protected with an integrated Zener diode, which provides protection against overvoltage, enhancing the device's durability.

Applications

The versatile STB28N65M2 is ideal for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting applications
  • High-efficiency DC/DC converters
  • Welding equipment
  • Uninterruptible Power Supplies (UPS)
  • Motor control circuits

Quality and Reliability

STMicroelectronics ensures that the STB28N65M2 meets the highest quality and reliability standards. The device is subjected to rigorous testing and is compliant with international standards. This commitment to quality guarantees that the STB28N65M2 will perform reliably over its intended lifespan, even under challenging environmental conditions.

With its combination of high-performance features, the STB28N65M2 is an excellent choice for designers who require a power MOSFET that does not compromise on efficiency or reliability. Whether for industrial, consumer, or computing applications, the STB28N65M2 from STMicroelectronics stands as a robust and versatile component in any power management design.

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $4.7406 $52.1466
26+ $3.8897 $101.1322
40+ $3.7682 $150.7280
55+ $3.6466 $200.5630
71+ $3.5251 $250.2821
95+ $3.1604 $300.2380
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,825 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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