STB28NM50N - N-channel 500 V, 0.077 Ω typ., 21 A MDmesh™ V Power MOSFET in a D²PAK package
The STB28NM50N is a cutting-edge N-channel Power MOSFET presented by STMicroelectronics, a global leader in semiconductor solutions. This device is a part of the MDmesh™ V series, which is renowned for its excellent energy efficiency and performance in high-voltage power applications.
With a drain-source voltage of 500 V, the STB28NM50N is designed to handle significant voltages, making it a perfect choice for a broad range of power applications. The MOSFET features a very low on-resistance of just 0.077 Ω typ., which is a critical attribute as it minimizes conduction losses, thereby enhancing the overall efficiency of the system in which it is used.
The device boasts a robust continuous drain current of 21 A, providing ample current handling capability for demanding applications. This high current rating, coupled with the device's high voltage rating, makes the STB28NM50N an excellent choice for applications such as switch-mode power supplies, LED lighting, DC-AC inverters for solar energy systems, and high-performance drives.
STMicroelectronics has housed the STB28NM50N in a rugged D²PAK package, known for its durability and excellent thermal performance. The package ensures that the MOSFET can operate reliably even in environments where it is subjected to high temperatures and mechanical stresses.
The MDmesh™ V technology of the STB28NM50N is based on an innovative vertical process which allows for lower on-resistance and reduced gate charge. These characteristics lead to reduced switching and conduction losses, making this MOSFET a highly efficient solution for power conversion.
Furthermore, the STB28NM50N features Zener-protected gate, providing enhanced reliability and protection against over-voltage, which is particularly important in harsh operating conditions. This built-in protection helps to extend the lifespan of both the MOSFET and the application it is used in.
Overall, the STB28NM50N from STMicroelectronics embodies a balance of high voltage capability, low on-resistance, high current capacity, and protection features, making it an exceptional component for designers looking to optimize their power management systems.