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STB34N50DM2AG

Part No STB34N50DM2AG
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series Automotive, AEC-Q101, MDmesh™ DM2
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 120mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1850 pF @ 100 V
Power Dissipation (Max) 190W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number STB34
Other Names 497-16135-2,497-16135-6,497-16135-1
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278162-STB34N50DM2AG
Ultra Librarian 3D Model Ultra Librarian STB34N50DM2AG CAD Model

Description

STB34N50DM2AG - High Efficiency N-Channel MOSFET by STMicroelectronics

The STB34N50DM2AG is a state-of-the-art N-Channel MOSFET produced by STMicroelectronics, designed to meet the stringent requirements of modern power electronics applications. This device is part of the MDmesh™ DM2 series, which is renowned for its excellent energy efficiency and performance. The MOSFET is engineered using advanced ST's proprietary super-junction technology that significantly reduces on-resistance (R<sub>DS(on)) and minimizes switching losses.

The STB34N50DM2AG boasts an impressive breakdown voltage of 500V, making it an ideal choice for high voltage applications. With a continuous drain current (I<sub>D) rating of 23A at 25°C, this component is capable of handling significant power levels, ensuring reliability in demanding situations.

One of the notable features of this MOSFET is its low gate charge (Q<sub>g), which enhances the switching performance. This characteristic, combined with an optimized capacitance profile, allows for reduced switching energy and faster turn-on and turn-off times, which is crucial for high-efficiency power supplies, lighting applications, and electronic ballasts.

Furthermore, the STB34N50DM2AG is encapsulated in a robust and compact D2PAK package, which offers excellent thermal performance and is suitable for surface mount technology (SMT). This packaging ensures that the device can be easily integrated into various electronic assemblies, providing designers with greater flexibility in PCB layout.

Thermal management is a critical aspect of power device performance, and the STB34N50DM2AG excels in this area. It features a maximum junction temperature (T<sub>j) of 150°C, allowing it to maintain stability and performance even under thermal stress.

STMicroelectronics also emphasizes environmental responsibility, and the STB34N50DM2AG complies with the RoHS directive, which restricts the use of certain hazardous substances in electronic equipment. This commitment to sustainability ensures that the product is not only powerful and efficient but also environmentally friendly.

In summary, the STB34N50DM2AG is a high-performance, energy-efficient N-Channel MOSFET that is well-suited for a wide range of applications, including switch-mode power supplies, converters, and inverters. Its advanced features and robust packaging make it a reliable and versatile choice for engineers looking to optimize their power electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.2723 $57.9953
27+ $4.3259 $116.7993
42+ $4.1908 $176.0136
57+ $4.0557 $231.1749
74+ $3.9205 $290.1170
99+ $3.5149 $347.9751
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,970 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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