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STB35N65M5

Part No STB35N65M5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 27A D2PAK
Datasheet
Sample
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 83nC @ 10V
Max Input Capacitance 3750pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 98 mOhm @ 13.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1005219-STB35N65M5
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STB35N65M5 CAD Model

Description

The STB35N65M5 from STMicroelectronics is a high-performance N-channel 650 V, 0.029 Ohm typ., 31 A MDmesh™ M5 Power MOSFET, housed in the robust and versatile D2PAK package. This state-of-the-art device is part of STMicroelectronics' MDmesh™ M5 series, which is renowned for its excellent energy efficiency and high power density, making it an ideal choice for a wide range of high-voltage applications.

Key Features

  • Advanced Technology: Built on the innovative MDmesh™ M5 technology, the STB35N65M5 offers extremely low on-resistance (R<sub>DS(on)) combined with a high threshold voltage, which translates into reduced conduction losses and improved switching performance.
  • High Voltage Capability: With a breakdown voltage of 650V, this MOSFET can comfortably handle high voltage applications, ensuring reliability and robustness in demanding situations.
  • High Current Rating: The device is capable of sustaining a continuous current of 31 A, making it suitable for high current applications.
  • Thermal Efficiency: The STB35N65M5 is designed with an optimal trade-off between on-resistance and gate charge, leading to a low figure of merit (FOM) and outstanding thermal performance.
  • Reduced Switching Losses: The MOSFET's fast recovery diode and low gate charge minimize switching losses, which is crucial for efficiency in power conversion applications.
  • Package: Enclosed in a D2PAK package, the STB35N65M5 offers a compact footprint with good thermal contact to the PCB, ensuring efficient heat dissipation.

Applications

The STB35N65M5 is versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • High-Efficiency Converters
  • Welding Equipment
  • Solar Inverters
  • UPS Systems
  • Motor Drives

With its combination of high voltage capability, low on-resistance, and high current handling, the STB35N65M5 is a powerful component for engineers looking to design energy-efficient and compact power solutions. Whether it's for industrial, consumer, or automotive applications, this MOSFET from STMicroelectronics delivers performance that can help push the boundaries of power management and conversion technologies.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.8424 $61.5816
21+ $5.6142 $117.8982
32+ $5.4388 $174.0416
44+ $5.2633 $231.5852
57+ $5.0879 $290.0103
76+ $4.5616 $346.6816
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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