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STB40NF10T4

Part No STB40NF10T4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 50A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 80nC @ 10V
Max Input Capacitance 1780pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 28 mOhm @ 25A, 10V
Temperature Range - Operating -50°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 031078-STB40NF10T4
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian STB40NF10T4 CAD Model

Description

STB40NF10T4 - N-Channel 100V - 0.022 ohm - 40A D²PAK STripFET™ II Power MOSFET

The STB40NF10T4 from STMicroelectronics is a high-performance N-channel Power MOSFET designed to deliver efficient power management and conversion. This MOSFET is part of the STripFET™ II series, which is renowned for its low on-resistance and high switching performance. The device is housed in a D²PAK package, which is well-suited for sophisticated power electronics applications.

With a drain-source voltage (V<sub>DS) of 100V, the STB40NF10T4 is capable of handling high voltages, making it suitable for a wide range of applications, including switch-mode power supplies, DC-DC converters, motor control, and automotive systems. Its low on-resistance of just 0.022 ohm ensures high efficiency and reduced heat generation during operation.

The device boasts a continuous drain current (I<sub>D) of 40A at 25°C, which means it can support high current loads without performance degradation. The STB40NF10T4 also features a fast switching speed, which is crucial for applications that require quick response times and high-frequency operation.

Additional features of the STB40NF10T4 include an excellent figure of merit (FOM), which indicates a balanced trade-off between on-resistance and gate charge, leading to optimized performance in switching applications. The MOSFET also has a low gate charge (Q<sub>g), which minimizes the power required to drive the gate, thus reducing the overall power consumption of the system.

For protection and reliability, the STB40NF10T4 includes an integrated avalanche ruggedness, which allows the device to withstand high energy pulses in the avalanche and commutation modes. This feature is particularly important in applications where the MOSFET may be exposed to harsh operating conditions.

In conclusion, the STB40NF10T4 Power MOSFET from STMicroelectronics is a robust and efficient solution for power management tasks that require high voltage capability, low on-resistance, and fast switching. Its suitability for a variety of applications, coupled with its protective features, makes it a valuable component for designers looking to enhance system performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9750 $53.6250
125+ $0.8000 $100.0000
195+ $0.7750 $151.1250
270+ $0.7500 $202.5000
345+ $0.7250 $250.1250
465+ $0.6500 $302.2500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 130 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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