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STB42N65M5

Part No STB42N65M5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 33A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 100nC @ 10V
Max Input Capacitance 4650pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 190W (Tc)
Maximum Rds On at Id,Vgs 79 mOhm @ 16.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 031079-STB42N65M5
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STB42N65M5 CAD Model

Description

The STB42N65M5 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, which is a part of their innovative MDmesh™ M5 series. This advanced MOSFET is designed using ST's state-of-the-art technology for applications that demand high efficiency and power density. It is particularly suitable for high-efficiency switching applications in power supplies, converters, motor control systems, and lighting solutions.

With a voltage rating of 650 V, the STB42N65M5 ensures robust operation even in high voltage environments, making it an ideal choice for applications that require a high breakdown voltage. The device boasts a very low on-resistance (RDS(on)) of 0.033 Ohm typical, which minimizes conduction losses and enhances overall efficiency. This low on-resistance, combined with a high current rating of 34 A, allows for exceptional performance in power conversion applications.

The STB42N65M5 is housed in a D2PAK package, which is known for its compact footprint and its ability to handle high thermal loads. This package is widely used in industry and is well-suited for space-constrained applications. Furthermore, the device features ST's proprietary MDmesh™ technology, which utilizes a unique vertical structure that achieves a very low gate charge (Qg) and low power dissipation while maintaining superior switching performance.

This Power MOSFET also integrates Zener-protected gate, providing enhanced protection against overvoltage and ensuring a higher level of reliability in challenging conditions. Additionally, the STB42N65M5 is characterized by its high junction temperature capability, which ensures reliable operation even at elevated temperatures.

Overall, the STB42N65M5 from STMicroelectronics represents an excellent choice for designers looking for a Power MOSFET that combines high voltage capability, low on-resistance, high current handling, and exceptional switching performance. Its robust package and advanced technology features make it a versatile component for a wide range of power applications.

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