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STB43N60DM2

Part No STB43N60DM2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 34A D2PAK  /  N-Channel 600 V 34A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ DM2
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 93mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 100 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number STB43
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000
Win Source Part Number 979945-STB43N60DM2
Ultra Librarian 3D Model Ultra Librarian STB43N60DM2 CAD Model

Description

STB43N60DM2 - High Performance N-Channel MOSFET by STMicroelectronics

The STB43N60DM2 is a state-of-the-art N-channel MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader. This power MOSFET is a key component in high-efficiency power conversion applications, including switch-mode power supplies, motor control, and power inverters. With its advanced MDmesh™ DM2 technology, the STB43N60DM2 offers an optimal balance between low on-resistance (R<sub>DS(on)) and low gate charge (Q<sub>g), resulting in superior energy efficiency and thermal performance.

Key Features of STB43N60DM2:

  • High Voltage Capability: It supports a maximum drain-source voltage (V<sub>DS) of 650V, allowing it to handle high voltage applications with ease.
  • Low On-Resistance: The device boasts an impressively low R<sub>DS(on) of only 0.084 Ω, minimizing conduction losses and improving overall efficiency.
  • Reduced Gate Charge: A low gate charge ensures faster switching speeds, which is critical for high-frequency power conversion circuits.
  • Enhanced Ruggedness: The MOSFET is designed for enhanced dv/dt capability, ensuring reliability under harsh switching conditions.
  • Improved Thermal Performance: Thanks to its advanced design, the STB43N60DM2 offers exceptional thermal performance, enabling higher power density and reduced cooling requirements.

Applications:

The versatility of the STB43N60DM2 makes it suitable for a wide range of applications:

  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • High-Efficiency DC-AC Inverters
  • LED Lighting Solutions
  • Motor Control Systems
  • Power Factor Correction (PFC) Circuits

STMicroelectronics' commitment to innovation is exemplified in the STB43N60DM2, which integrates robustness and high performance in a TO-220 package. Its superior electrical characteristics make it an excellent choice for designers looking to optimize their power management solutions for both performance and cost.

For detailed specifications, application notes, and additional resources, customers can visit the official STMicroelectronics website or contact their local sales office. The STB43N60DM2 represents a strategic choice for engineers aiming to achieve energy efficiency and reliability in their next-generation power electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $28.1531 $84.4593
5+ $23.1000 $115.5000
8+ $22.3781 $179.0248
11+ $21.6563 $238.2193
14+ $20.9344 $293.0816
19+ $18.7688 $356.6072
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Availability: 620 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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