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STB7NB60T4

Part No STB7NB60T4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Power MOSFET Transistors N-Ch 600 Volt 7 Amp
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package D2PAK
Continuous Drain Current (ID) 7 A
Drain to Source Breakdown Voltage 600 V
Drain to Source Resistance 1 Ω
Element Configuration Single
Fall Time 5 ns
Gate to Source Voltage (Vgs) 30 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -65 °C
Power Dissipation 125 W
Rise Time 8 ns
RoHS Non-Compliant
Win Source Part Number 1096713-STB7NB60T4
Categories Transistors - FETs, MOSFETs - RF
Manufacturer STMicroelectronics
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian STB7NB60T4 CAD Model

Description

STB7NB60T4 - N-CHANNEL 600V - 1.15 OHM - 7A D2PAK MDmesh™ Power MOSFET

The STB7NB60T4 from STMicroelectronics is a state-of-the-art N-CHANNEL Power MOSFET designed for high efficiency and reliability in power conversion applications. This device is part of the MDmesh™ family, which is renowned for its innovative technology that reduces on-resistance and total gate charge, enhancing the overall performance of power electronic systems.

With a drain-source voltage of 600V, the STB7NB60T4 is perfectly suited for handling high voltage operations, making it an ideal choice for applications such as switch-mode power supplies, lighting, welding, and other high-performance converters. Its low on-resistance of 1.15 ohm ensures minimal power loss during operation, thus improving the efficiency of the application it is used in.

The device boasts a continuous drain current of 7A, providing ample current handling capability for most power applications. Additionally, the STB7NB60T4 comes in a robust and compact D2PAK package, which is designed to offer excellent thermal performance and is suitable for use in space-constrained environments.

Key features of the STB7NB60T4 include:

  • High voltage capability (600V) for robust power handling
  • Low on-resistance (1.15 ohm) for enhanced efficiency
  • High current handling (7A) for demanding applications
  • MDmesh™ technology for optimized switching performance
  • D2PAK package for improved thermal management and compact design
  • 100% avalanche tested, ensuring reliability under extreme conditions

The STB7NB60T4 is also characterized by its exceptional ruggedness and its ability to withstand high energy pulses in the avalanche and commutation modes. This feature makes it a highly reliable component for designers to incorporate into their systems, where durability and longevity are critical.

Whether you are designing an energy-efficient power supply or looking to improve the performance of your electronic systems, the STB7NB60T4 from STMicroelectronics offers the quality, efficiency, and reliability that modern power applications demand.

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