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STB85NF55LT4

Part No STB85NF55LT4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 110nC @ 5V
Max Input Capacitance 4050pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1021832-STB85NF55LT4
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STB85NF55LT4 CAD Model

Description

STB85NF55LT4 - STMicroelectronics N-Channel MOSFET

The STB85NF55LT4 is a high-performance N-Channel MOSFET designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This device is part of the STripFET™ II Power MOSFET series, which is renowned for its low on-resistance and high switching performance. The STB85NF55LT4 is optimized for a wide range of applications, from power management to high-efficiency converters, making it a versatile component for modern electronic designs.

Key Features:

  • High Current Capability: With a continuous drain current (ID) of 80A, the STB85NF55LT4 can handle significant power, making it suitable for demanding applications.
  • Low On-Resistance (RDS(on)): The device features a very low on-state resistance of 8.0 mOhm typical at 10V, which enhances its efficiency by minimizing conduction losses.
  • High Voltage Tolerance: It can withstand drain-source voltages (VDS) up to 55V, providing a good safety margin for applications with high voltage requirements.
  • Improved Threshold Voltage (VGS(th)): The threshold voltage ranges from 2V to 4V, ensuring a precise control over the switching characteristics of the MOSFET.
  • Enhanced Durability: Its ruggedized device design and structure provide an improved avalanche and dv/dt capability, offering reliable performance under harsh conditions.

Applications:

  • Switching regulators
  • DC-DC converters
  • Motor drivers
  • Power management solutions
  • Automotive applications
  • High-efficiency power supplies

The STB85NF55LT4 is presented in a D2PAK package, which is suitable for surface-mount technology (SMT) and offers excellent thermal performance. The combination of high current handling, low on-resistance, and high voltage tolerance makes this MOSFET an ideal choice for engineers looking to improve the efficiency and reliability of their power circuits.

With its robust design and advanced technology, the STB85NF55LT4 from STMicroelectronics is a testament to the company's commitment to providing high-quality power components that meet the evolving demands of the electronics industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3710 $59.2750
60+ $1.9455 $116.7300
92+ $1.8847 $173.3924
127+ $1.8239 $231.6353
164+ $1.7631 $289.1484
220+ $1.5807 $347.7540
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,330 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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