The STB9NK90Z from STMicroelectronics is a high-performance N-channel Zener-protected Power MOSFET designed using the company's advanced SuperMESH™ technology. This technology combines the benefits of reduced on-resistance, high switching speed, and ruggedized device design to provide the electronic market with a highly efficient, reliable, and energy-saving semiconductor component.

Key Features

• Extreme dv/dt Capability: The STB9NK90Z is engineered to withstand extreme voltage changes, ensuring reliability and stability in applications where voltage spikes are common.
• 100% Avalanche Tested: Each device is rigorously tested for avalanche performance, ensuring it can handle sudden energy discharges without failure.
• Gate Charge Minimized: The reduced gate charge of this MOSFET allows for faster switching speeds, which is critical for high-efficiency power supplies and converters.
• Zener-Protected: The built-in Zener diodes provide protection against overvoltage, enhancing the overall durability of the MOSFET.

Applications

The STB9NK90Z is ideal for a wide range of high-voltage applications, including:

• Switching power supplies
• Motor control
• Power factor correction circuits
• Electronic ballasts for lighting
• High-performance converters

Product Specifications

The device boasts impressive specifications that make it suitable for demanding power applications:

• Drain-source Voltage (V<sub>DS): 900V
• Continuous Drain Current (I<sub>D): 8A
• Static Drain-source On Resistance (R<sub>DS(on)): 1.7 Ohm
• Package: Available in TO-220, TO-220FP, and D2PAK packages for design flexibility

This MOSFET is a testament to STMicroelectronics' commitment to providing advanced semiconductor solutions that meet the needs of modern electronic systems. With its combination of high voltage capability, fast switching, and robust protection features, the STB9NK90Z is an excellent choice for designers looking to enhance system performance while maintaining energy efficiency and reliability.