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STD10N60M6

Part No STD10N60M6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 6.4A DPAK  /  N-Channel 600 V 6.4A (Tc) 60W (Tc) Surface Mount D-PAK (TO-252)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ M6
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 6.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.8 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 338 pF @ 100 V
Power Dissipation (Max) 60W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D-PAK (TO-252)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number STD10
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-STD10N60M6TR
Standard Package 2,500
Win Source Part Number 966945-STD10N60M6
Ultra Librarian 3D Model Ultra Librarian STD10N60M6 CAD Model

Description

The STD10N60M6 from STMicroelectronics is a high-performance, N-channel, SuperMESH™ 6 Power MOSFET that is designed to meet a wide range of applications. This MOSFET utilizes the latest advancements in technology to offer superior switching performance, high efficiency, and reliability. It is particularly suitable for applications that require efficient power management and high power density.

This device operates at a standard threshold voltage, with a 600V drain-source breakdown voltage, which makes it ideal for high voltage applications. The STD10N60M6 boasts an extremely low on-resistance of typically 0.68Ω, which results in reduced conduction losses, thereby improving overall system efficiency. Its maximum continuous drain current is rated at 10A, allowing it to handle significant power without overheating.

The STD10N60M6 comes in a surface-mount DPAK (TO-252) package, which is widely used in the industry and known for its compact size and ease of integration into various circuit designs. This package also provides excellent thermal performance, ensuring the device operates within its specified temperature range, even under high load conditions.

This MOSFET is designed with STMicroelectronics' proprietary SuperMESH™ 6 technology, which combines the benefits of reduced gate charge, low capacitance, and optimized body diode characteristics. This leads to a product that not only switches faster but also exhibits lower switching losses. As a result, designers can achieve higher efficiency in switching power supplies, lighting applications, DC-DC converters, and other power-related applications.

The STD10N60M6 is also characterized by its robustness and reliability, with features like 100% avalanche tested and zener-protected gate, which safeguards the device against voltage spikes and surges. It is compliant with the stringent industrial standards, ensuring a high level of performance and safety for the end-users.

In summary, the STD10N60M6 Power MOSFET from STMicroelectronics is a versatile and efficient solution for designers who require a high-voltage, high-performance, and reliable component for their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6546 $52.3680
190+ $0.5372 $102.0680
290+ $0.5204 $150.9160
400+ $0.5036 $201.4400
515+ $0.4868 $250.7020
690+ $0.4364 $301.1160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,354 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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