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STD10NM50N

Part No STD10NM50N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 7A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 450pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 70W (Tc)
Maximum Rds On at Id,Vgs 630 mOhm @ 3.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 107853-STD10NM50N
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STD10NM50N CAD Model

Description

Introducing the STD10NM50N MOSFET by STMicroelectronics

The STD10NM50N is a cutting-edge N-channel MOSFET brought to you by STMicroelectronics, a global semiconductor leader known for its innovative and reliable products. This high-performance MOSFET is part of ST's MDmesh™ M5 series, which utilizes state-of-the-art technology to offer energy-efficient power management solutions.

The STD10NM50N boasts a drain-source voltage (VDS) of 500V, which makes it an excellent choice for high-voltage applications. Its maximum continuous drain current (ID) is rated at 9A, ensuring it can handle significant power loads. With a low on-resistance (RDS(on)) of just 0.65Ω, this MOSFET is designed to minimize power losses, making it highly efficient for a wide range of applications.

One of the standout features of the STD10NM50N is its enhanced power density. The device's compact TO-252 (DPAK) package allows for a smaller footprint while still delivering robust performance. This makes it ideal for space-constrained applications where efficiency and reliability cannot be compromised.

The STD10NM50N is also characterized by its fast switching capabilities, thanks to its low gate charge (Qg) and low input capacitance (Ciss). This results in reduced switching losses and improved overall performance in high-frequency circuits. Additionally, the MOSFET features Zener-protected gate, which provides an inherent ruggedness against static discharge and enhances its reliability in harsh environments.

Applications for the STD10NM50N are diverse and include switch-mode power supplies (SMPS), LED lighting solutions, high-efficiency converters, and power management tasks in consumer electronics, industrial systems, and telecommunications infrastructure. Its ability to operate at high voltages with low conduction losses makes it a versatile component for designers looking to optimize their power circuits.

In summary, the STD10NM50N from STMicroelectronics is a powerful and efficient solution for modern electronic designs requiring high voltage, low losses, and compact size. Its advanced features and robust package make it a go-to choice for engineers aiming to enhance the performance and reliability of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5455 $61.8200
95+ $1.2682 $120.4790
145+ $1.2286 $178.1470
195+ $1.1890 $231.8550
255+ $1.1492 $293.0460
340+ $1.0304 $350.3360
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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