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STD11N60M2-EP

Part No STD11N60M2-EP
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7.5A DPAK / N-Channel 600 V 7.5A (Tc) 85W (Tc) Surface Mount DPAK
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr STMicroelectronics
Series MDmesh™ M2-EP
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 595mOhm @ 3.75A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.4 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 390 pF @ 100 V
FET Feature -
Power Dissipation (Max) 85W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number STD11
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500 pcs
Win Source Part Number 1383544-STD11N60M2-EP
Ultra Librarian 3D Model Ultra Librarian STD11N60M2-EP CAD Model

Description

Product Overview: STD11N60M2-EP

The STD11N60M2-EP, from STMicroelectronics, is a state-of-the-art power MOSFET designed for high-efficiency power conversion and switching applications. This N-channel MOSFET is part of STMicroelectronics' MDmesh™ M2 EP series, which is renowned for its excellent performance in terms of energy efficiency, reliability, and thermal management.

Key Features

  • Voltage Rating: The STD11N60M2-EP boasts a drain-source voltage (V<sub>DS) of 600V, making it suitable for a wide range of applications that require high voltage operations.
  • Current Capacity: With a continuous drain current (I<sub>D) of 11A, this MOSFET can handle significant power levels, suitable for various electronic circuits and power systems.
  • Low On-Resistance: The device features a low on-state resistance (R<sub>DS(on)) of 0.52Ω, minimizing conduction losses and enhancing overall efficiency.
  • Fast Switching: Fast-switching capabilities are a hallmark of the STD11N60M2-EP, ensuring reduced switching losses and improved performance in high-frequency circuits.
  • Enhanced Power Density: The MDmesh™ M2 EP technology provides an optimized balance between conduction and switching losses, leading to an increased power density and reduced energy consumption.
  • Robustness: The device is engineered for high ruggedness and reliability, which is critical for enduring stressful conditions in industrial environments.

Applications

The versatility of the STD11N60M2-EP allows it to be used in a diverse array of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • High-efficiency DC-DC converters
  • Motor Control Systems
  • Power Adapters
  • Welding Equipment

Package and Quality

The STD11N60M2-EP is available in a TO-252 (DPAK) package, which is suitable for compact designs and ensures good thermal performance. STMicroelectronics is committed to delivering high-quality products, and this MOSFET is no exception. It is manufactured to meet stringent standards, ensuring reliability and performance consistency for the end-user.

For engineers and designers looking for a robust, efficient, and reliable power MOSFET solution, the STD11N60M2-EP from STMicroelectronics is an excellent choice that delivers superior performance in a wide range of electronic applications.

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