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STD127DT4

Part No STD127DT4
Manufacturer STMicroelectronics
Catalog Transistors (BJT) - Single
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr STMicroelectronics
Package Tape & Reel
Product Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 4 A
Voltage - Collector Emitter Breakdown (Max) 400 V
Vce Saturation (Max) @ Ib, Ic 1.3V @ 1A, 4A
Current - Collector Cutoff (Max) 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 1A, 5V
Power - Max 35 W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Base Product Number STD12
Other Names 497-14529-6,STD127DT4,497-14529-2,-497-14529-1,497-14529-1,-497-14529-2,-497-14529-6
Standard Package 2,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278591-STD127DT4
Ultra Librarian 3D Model Ultra Librarian STD127DT4 CAD Model

Description

The STD127DT4 from STMicroelectronics is a high-performance dual N-channel MOSFET, engineered to deliver efficient power management and switching with a low on-state resistance. This advanced power MOSFET is designed to meet a wide range of applications, including DC-DC converters, motor control circuits, and general-purpose switching applications.

Key Features

  • Low On-Resistance: The device features an exceptionally low on-state resistance (R<sub>DS(on)), which minimizes conduction losses and enhances overall efficiency.
  • High Switching Speed: With its fast switching performance, the STD127DT4 ensures reduced switching losses, making it suitable for high-frequency applications.
  • Dual N-Channel Configuration: The integration of two N-channel MOSFETs in one package allows for compact designs and simplified PCB layout.
  • Enhanced Thermal Performance: The power MOSFET's design is optimized for improved heat dissipation, ensuring reliable operation even under high load conditions.
  • High Current Capability: It is capable of handling high continuous drain currents, making it a robust choice for demanding power applications.
  • Voltage Rating: The device is rated for a maximum drain-source voltage (V<sub>DSS), providing a wide safety margin for various electronic designs.

Applications

The STD127DT4 is versatile enough to be used in a variety of applications, including:

  • Power supply units
  • DC-DC converters
  • Motor control systems
  • Automotive applications
  • Power management solutions

Quality and Reliability

STMicroelectronics is known for its commitment to quality and reliability. The STD127DT4 is built to meet the highest industry standards, ensuring long-term reliability for the end user's application. Its robustness and durability make it a preferred choice for designers looking for a dependable power MOSFET solution.

Conclusion

With its combination of low on-resistance, high-speed switching, dual-channel configuration, and excellent thermal performance, the STD127DT4 is an ideal choice for engineers and designers looking to improve the efficiency and performance of their power management systems. STMicroelectronics' dedication to quality guarantees that this MOSFET will deliver consistent performance and reliability in a multitude of electronic applications.

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