The STD130N6F7 is a cutting-edge power MOSFET developed by STMicroelectronics, designed to deliver superior performance in a wide array of applications. This N-channel MOSFET is a part of the STripFET™ VII DeepGATE™ technology, ensuring high switching performance with a low on-state resistance (R<sub>DS(on)) for increased efficiency and power density.

Key Features

• Low Threshold Drive: The device can be driven at lower gate voltages, making it compatible with low-voltage logic levels, thus reducing the need for additional drive circuitry.
• High Switching Efficiency: With STMicroelectronics' advanced technology, the STD130N6F7 offers excellent switching performance, which is crucial for reducing energy losses during power conversion.
• Low On-resistance: The low R<sub>DS(on) translates to reduced conduction losses, offering improved overall efficiency in applications such as DC-DC converters, motor control, and power management systems.
• 100% Avalanche Tested: This ensures the MOSFET can withstand high-energy pulses, making it reliable for use in rugged environments and applications that may experience unexpected voltage spikes.

Applications

The versatility of the STD130N6F7 allows it to be used in a variety of applications, including but not limited to:

• Switching regulators
• Power management systems
• Motor control circuits
• High-efficiency DC-DC converters
• Automotive applications and load switches

Technical Specifications

Parameter Value Drain-source Voltage (V<sub>DSS) 60V Continuous Drain Current (I<sub>D) 80A Power Dissipation (P<sub>D) 110W Operating Temperature Range -55°C to 175°C Package TO-252 (DPAK)

The STD130N6F7 from STMicroelectronics represents a blend of robustness, efficiency, and reliability, suitable for high-performance power switching applications.