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STD13N60M2

Part No STD13N60M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A DPAK / Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) DPAK T/R
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 580pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 5.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 131130-STD13N60M2
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name STD13N60M2
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2031
Ultra Librarian 3D Model Ultra Librarian STD13N60M2 CAD Model

Description

The STD13N60M2 is a cutting-edge N-channel 600 V, 0.28 Ω, 10 A MDmesh™ M2 Power MOSFET, proudly presented by STMicroelectronics. This high-performance MOSFET is designed using an innovative proprietary vertical process technology, which is tailored to deliver the best in class on-resistance and dynamic performance. The device is particularly suitable for high efficiency applications, ensuring exceptional power density and reliability for a wide range of uses.

Key Features

  • High Voltage Capability: With a breakdown voltage of 600 V, the STD13N60M2 is ideal for high voltage applications, providing a reliable solution for designers.
  • Low On-Resistance: A low on-resistance of 0.28 Ω minimizes conduction losses, enhancing overall efficiency and thermal performance.
  • High Current Rating: The device can handle continuous currents up to 10 A, making it suitable for handling high power levels.
  • MDmesh™ M2 Technology: Utilizing STMicroelectronics' second-generation MDmesh technology, the STD13N60M2 offers improved switching performance, which is crucial for power efficiency.
  • Reduced Gate Charge: A low gate charge ensures faster switching, reducing losses and improving performance in high-frequency applications.
  • 100% Avalanche Tested: Each device is rigorously tested for avalanche ruggedness, ensuring reliability and robustness in harsh conditions.

Applications

The STD13N60M2 is versatile and can be used in a variety of applications, including:

  • Switching power supplies and converters
  • LED lighting solutions
  • High-performance computing systems
  • Motor control circuits
  • Power management solutions

Quality and Environmental Compliance

STMicroelectronics is committed to providing environmentally friendly products. The STD13N60M2 is compliant with RoHS (Restriction of Hazardous Substances) and is designed to meet the current and future demands of energy-efficient systems, contributing to the reduction of carbon footprint and promoting sustainability.

With its robust design, high efficiency, and reliability, the STD13N60M2 from STMicroelectronics stands out as an excellent choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4717 $51.8870
230+ $0.4418 $101.6140
355+ $0.4269 $151.5495
505+ $0.3971 $200.5355
655+ $0.3821 $250.2755
820+ $0.3672 $301.1040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 61,000 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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