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STD2NK70ZT4

Part No STD2NK70ZT4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 700V 1.6A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 700V
Continuous Drain Current at 25°C 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 11.4nC @ 10V
Max Input Capacitance 280pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 7 Ohm @ 800mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 113194-STD2NK70ZT4
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STD2NK70ZT4 CAD Model

Description

STD2NK70ZT4 - STMicroelectronics MOSFET

The STD2NK70ZT4 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, one of the leading manufacturers in semiconductor technology. This device is designed to target a wide range of applications, offering a perfect balance between high efficiency and reliability. With its advanced technology, the STD2NK70ZT4 is suitable for use in power supply, lighting, motor control, and automotive systems, among others.

This Power MOSFET is built using STMicroelectronics' innovative STripFET™ process, which allows for lower on-resistance and reduced gate charge, enhancing the overall efficiency of the device. The STD2NK70ZT4 boasts a drain-source voltage (V<sub>DS) of 700V, which ensures safe operation in high-voltage environments, making it an excellent choice for applications that require high breakdown voltage.

With a continuous drain current (I<sub>D) of 2A, the STD2NK70ZT4 can handle a moderate amount of current, making it versatile for various power management tasks. Its low threshold voltage ensures that it can be driven at lower gate voltages, translating into lower driving losses and better power efficiency. Moreover, the device features a fast switching speed, which is essential for reducing switching losses and improving performance in high-frequency applications.

The STD2NK70ZT4 comes in a surface-mount DPAK (TO-252) package, which is designed for compact PCB layouts and is well-suited for automated assembly processes. The package is also RoHS compliant and Halogen-free, which aligns with the current environmental standards, ensuring minimal environmental impact.

In summary, the STD2NK70ZT4 from STMicroelectronics is a robust, high-voltage N-channel MOSFET that offers an excellent efficiency-to-performance ratio for a variety of power applications. Its advanced technology, combined with its compact packaging and environmental compliance, makes it a smart choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0826 $59.5430
135+ $0.8883 $119.9205
205+ $0.8606 $176.4230
280+ $0.8328 $233.1840
360+ $0.8050 $289.8000
485+ $0.7218 $350.0730
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,550 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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