STMicroelectronics STD4N52K3 N-Channel MOSFET
The STD4N52K3 is a high-performance N-channel MOSFET from STMicroelectronics, renowned for its efficiency and reliability in a wide range of applications. This power MOSFET is designed using STMicroelectronics' advanced STripFET™ III technology, which provides an excellent trade-off between on-resistance and gate charge, making it an ideal choice for high-efficiency power management tasks.
Key Features
- Low Threshold Drive: The STD4N52K3 operates at a low gate threshold voltage, making it suitable for low-voltage drive applications.
- High Current Capability: With a continuous drain current (ID) of 4.4 A, this MOSFET can handle significant power for its size.
- Low On-Resistance (RDS(on)): This device offers a very low on-state resistance of typically 0.135 Ω, which enhances overall efficiency by minimizing power loss during operation.
- 100% Avalanche Tested: Each unit is rigorously tested to ensure it can withstand high-energy pulses in the avalanche and commutation modes.
- Enhanced Durability: The MOSFET is encapsulated in a robust surface-mount DPAK package, ensuring long-term reliability and thermal performance.
Applications
The STD4N52K3 is versatile and can be used in a range of applications, including:
- Switch Mode Power Supplies (SMPS)
- High-efficiency DC-DC converters
- Motor control circuits
- Load switches
- Power management functions
Technical Specifications
Parameter
Value
Drain-source Voltage (VDS)
525 V
Gate-source Voltage (VGS)
± 30 V
Continuous Drain Current (ID)
4.4 A
Power Dissipation (PD)
45 W
Operating Temperature
-55 °C to 150 °C
With its impressive electrical characteristics and thermal performance, the STD4N52K3 is a reliable and efficient solution for designers looking to improve power density and efficiency in their circuits.
