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STD5N52K3

Part No STD5N52K3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 525V 4.4A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 525V 4.4A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 525V
Continuous Drain Current at 25°C 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 545pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 70W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 2.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 031150-STD5N52K3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name STD5N52K3
Introduction Date January 05, 2010
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian STD5N52K3 CAD Model

Description

STD5N52K3 - Power MOSFET by STMicroelectronics

The STD5N52K3 is a high-performance N-channel Power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This device is part of the STripFET™ III technology, which emphasizes low on-resistance and high switching performance, making it suitable for a wide range of power applications.

Key Features

  • Low Threshold Drive: The device operates at a low gate threshold voltage, allowing it to be driven by low-voltage control signals and making it compatible with a wide range of driving circuits.
  • High Switching Speed: With its fast switching characteristics, the STD5N52K3 is ideal for high-frequency applications, resulting in improved overall efficiency.
  • Low On-Resistance (R<sub>DS(on)): The low on-state resistance ensures minimal power loss during operation, leading to higher efficiency and reduced heat generation.
  • 100% Avalanche Tested: This device has been rigorously tested for avalanche ruggedness, ensuring reliability and robustness in harsh conditions.
  • Improved dv/dt Capability: The STD5N52K3 is designed to withstand high voltage variations, which is crucial for protecting the device and the circuit in inductive switching environments.

Applications

The versatility of the STD5N52K3 allows it to be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • High-efficiency DC-DC converters
  • Motor control applications
  • Power management solutions
  • LED lighting solutions

Product Specifications

The STD5N52K3 boasts a drain-source voltage (V<sub>DS) of 525V, a continuous drain current (I<sub>D) of 4.4A, and a power dissipation (P<sub>D) of 45W, encapsulated in a TO-252 (DPAK) package. Its threshold voltage (V<sub>GS(th)) is typically 3V, with a maximum R<sub>DS(on) of 1.2 ohms at a V<sub>GS of 10V.

For detailed technical specifications, application notes, and datasheets, visit the STMicroelectronics website or contact their support team for personalized assistance with your power design needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6225 $59.1375
230+ $0.5105 $117.4150
355+ $0.4943 $175.4765
485+ $0.4793 $232.4605
625+ $0.4632 $289.5000
840+ $0.4146 $348.2640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,497 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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