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STD6N60M2

Part No STD6N60M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 8nC @ 10V
Max Input Capacitance 232pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 60W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 2.25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1102911-STD6N60M2
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STD6N60M2 CAD Model

Description

The STD6N60M2 is a high-performance N-channel, Power MOSFET brought to you by STMicroelectronics, a global semiconductor leader known for their state-of-the-art electronic components. This MOSFET is part of the MDmesh™ M2 series, which utilizes ST's innovative second-generation MDmesh™ technology, offering outstanding on-state resistance and switching performance, making it an ideal choice for high-efficiency solutions.

Key Features

  • Voltage Rating: The STD6N60M2 boasts a 600V drain-source breakdown voltage, providing a robust and reliable performance in high-voltage applications.
  • Current Capacity: It has a continuous drain current of 6 A, ensuring adequate current handling capability for a wide range of applications.
  • Low On-Resistance: With a low on-state resistance of 1.15 Ohm, this MOSFET ensures minimal power loss and heat generation during operation.
  • Fast Switching Speed: The device features a fast switching speed, which is essential for reducing switching losses and improving overall efficiency in power conversion applications.
  • Enhanced Efficiency: The STD6N60M2 is designed to provide improved efficiency in high-frequency circuits, thanks to its low gate charge and capacitance.
  • High Ruggedness: Its robust design ensures high ruggedness, making it suitable for demanding environments and applications.
  • Package: Available in a surface-mount DPAK package, the STD6N60M2 is designed for compact and space-constrained applications.

Applications

The STD6N60M2 is versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED lighting systems
  • High-efficiency DC-DC converters
  • Motor control circuits
  • Power management functions

Conclusion

STMicroelectronics' STD6N60M2 N-channel Power MOSFET is an excellent choice for designers looking for a high-performance power transistor that combines efficiency, reliability, and compactness. Its advanced technology and electrical characteristics make it suitable for a broad range of power applications, affirming STMicroelectronics' commitment to providing innovative and energy-efficient solutions to the electronics industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.0568 $51.4200
52+ $1.9242 $100.0584
81+ $1.8578 $150.4818
116+ $1.7251 $200.1116
151+ $1.6588 $250.4788
189+ $1.5924 $300.9636
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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