The STD6N90K5 is a high-performance N-channel Power MOSFET from STMicroelectronics, designed using the innovative SuperMESH™5 technology. This technology combines extreme dv/dt ruggedness with very high efficiency for a wide variety of applications. The device is housed in a DPAK package, which is known for its compact footprint and ability to handle high power density.

Key Features

• High Voltage Capability: With a breakdown voltage of 900 V, the STD6N90K5 is well-suited for high voltage applications that require reliable performance under demanding conditions.
• Low On-resistance: Featuring an on-resistance of just 1.07 Ω (typical), this MOSFET ensures high efficiency and low conduction losses, making it ideal for power conversion applications.
• High Current Rating: The device can handle continuous current up to 5.4 A, making it capable of powering a wide range of electronic circuits and components.
• Enhanced Thermal Performance: The DPAK package enhances thermal performance, providing better reliability and longevity for the MOSFET when operating at high temperatures or under heavy loads.
• 100% Avalanche Tested: Each device is rigorously tested for avalanche ruggedness, ensuring it can withstand tough conditions without failing.
• Zener-protected: The built-in Zener diode offers protection against overvoltage, enhancing the overall durability of the MOSFET.

Applications

The STD6N90K5 is versatile and can be used in a variety of applications, including:

• Switch Mode Power Supplies (SMPS)
• LED Lighting applications
• High-efficiency converters
• Adapters and chargers
• Power factor correction circuits
• Motor control circuits

The combination of its high voltage capability, low on-resistance, and high current rating makes the STD6N90K5 a robust and efficient solution for designers looking to improve performance while maintaining energy efficiency in their power management systems.