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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 13.5nC @ 10V
Max Input Capacitance 400pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 032099-STF10N60M2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STF10N60M2 CAD Model

Description

STF10N60M2 - Power MOSFET by STMicroelectronics

The STF10N60M2 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This device is part of STMicroelectronics' MDmesh™ M2 series, which is renowned for its excellent energy efficiency and high power density. The STF10N60M2 is designed to meet the stringent requirements of modern power supply applications, offering low on-resistance, high blocking voltage, and fast switching performance.

With a drain-source voltage (V<sub>DS) of 600V, the STF10N60M2 is well-suited for high voltage applications. Its maximum continuous drain current (I<sub>D) at 25°C is 10A, making it capable of handling significant power. The device's low threshold voltage (V<sub>GS(th)) ensures that it can be driven at lower gate voltages, which is beneficial for power-saving strategies and compatible with a wide range of drive circuits.

The MOSFET's on-resistance (R<sub>DS(on)) is exceptionally low at 0.65Ω, which minimizes conduction losses and improves overall efficiency. This characteristic, combined with its fast switching speed, makes the STF10N60M2 an ideal choice for high-efficiency power converters, such as those used in switching power supplies, lighting applications, and motor control systems.

The STF10N60M2 incorporates advanced MDmesh™ M2 technology, which utilizes a proprietary vertical structure that enhances the device's performance by reducing on-resistance and gate charge (Q<sub>g). This technology allows for improved power handling and thermal performance, which is critical for reliability and longevity in demanding applications.

Packaged in a fully insulated TO-220FP package, the STF10N60M2 ensures a high level of electrical isolation and heat dissipation. The package design is optimized for easy mounting and is compatible with standard assembly processes, which simplifies the integration of the MOSFET into a wide range of electronic systems.

In summary, the STF10N60M2 from STMicroelectronics is a robust and efficient power MOSFET solution, offering designers a combination of high voltage capability, low on-resistance, and fast switching performance, all encapsulated in a practical and reliable package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7304 $51.1280
170+ $0.5993 $101.8810
260+ $0.5806 $150.9560
360+ $0.5619 $202.2840
465+ $0.5431 $252.5415
620+ $0.4870 $301.9400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 2,000 pieces
MOQ: 70 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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