STF110N10F7 - High-Performance MOSFET from STMicroelectronics
The STF110N10F7 is a state-of-the-art N-channel MOSFET brought to you by STMicroelectronics, a global leader in semiconductor solutions. This power MOSFET is designed using ST's advanced MDmesh™ VII technology, which combines low on-resistance (R<sub>DS(on)) with a high switching speed, making it an excellent choice for a wide range of high-efficiency applications.
Key Features
- Low Threshold Voltage: The device features a low threshold voltage that ensures low gate drive power consumption, enabling more efficient operation at low voltages.
- High Current Capability: With a continuous drain current (I<sub>D) of up to 110 A, the STF110N10F7 can handle high current loads, making it suitable for demanding power applications.
- Low R<sub>DS(on): The low on-state resistance minimizes conduction losses and enhances overall efficiency, which is critical for power management in modern electronic circuits.
- 100% Avalanche Tested: This device is guaranteed to withstand high energy pulses in the avalanche and commutation modes, ensuring reliability and robustness in challenging conditions.
- Enhanced Body Diode: The fast and robust body diode provides efficient and reliable operation during reverse recovery, which is particularly beneficial in hard-switching applications.
Applications
The STF110N10F7 is versatile and can be used in a variety of power applications, including:
- Switch Mode Power Supplies (SMPS)
- High-Performance Computing
- DC-DC Converters
- Solar Inverters
- Motor Control
- Automotive Applications
Technical Specifications
Parameter
Value
Drain-source Voltage (V<sub>DS)
100 V
Continuous Drain Current (I<sub>D)
110 A
On-state Resistance (R<sub>DS(on))
7 mΩ
Power Dissipation (P<sub>D)
180 W
Operating Temperature Range
-55°C to 175°C
For designers and engineers looking for a robust and efficient power MOSFET, the STF110N10F7 from STMicroelectronics offers a compelling solution that combines performance, reliability, and energy efficiency.
