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STF11N60DM2

Part No STF11N60DM2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 10A TO220FP  /  N-Channel 600 V 10A (Tc) 25W (Tc) Through Hole TO-220FP
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ DM2
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 420mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16.5 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 614 pF @ 100 V
Power Dissipation (Max) 25W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FP
Package / Case TO-220-3 Full Pack
Base Product Number STF11
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-16960
Standard Package 1,000
Win Source Part Number 1097389-STF11N60DM2
Ultra Librarian 3D Model Ultra Librarian STF11N60DM2 CAD Model

Description

STF11N60DM2 - High Performance N-Channel MOSFET

The STF11N60DM2 is a state-of-the-art N-channel MOSFET brought to you by STMicroelectronics, designed to deliver high efficiency and reliability for a wide range of applications. This power MOSFET is a part of ST's MDmesh™ DM2 series, which is renowned for its excellent on-state resistance (R<sub>DS(on)) and superior switching performance.

Key Features

  • Advanced MDmesh™ DM2 Technology: Utilizes the latest advancements in super-junction technology to enhance performance.
  • High Voltage Capability: With a drain-source voltage (V<sub>DSS) of 600V, it is well-suited for high voltage applications.
  • Low On-Resistance: Features a low R<sub>DS(on) which minimizes conduction losses and improves overall efficiency.
  • Fast Switching Speed: Its fast switching characteristics make it ideal for high-frequency circuits.
  • Reduced Gate Charge: A lower Q<sub>g leads to less power being required for gate driving, thus reducing the total power consumption.
  • Robustness: The device is designed to withstand harsh conditions, ensuring long-term reliability.

Applications

The STF11N60DM2 is versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • High-Efficiency DC-DC Converters
  • Power Factor Correction (PFC) circuits
  • Motor Drives and Inverters
  • Welding Equipment

Package and Environment

STMicroelectronics has packaged the STF11N60DM2 in a TO-220FP, which is known for its robustness and excellent thermal performance. This package ensures that the device can operate efficiently even under high power and temperature conditions. Additionally, the STF11N60DM2 is compliant with RoHS and Halogen-Free standards, reflecting STMicroelectronics' commitment to environmental sustainability.

With its combination of high performance, efficiency, and reliability, the STF11N60DM2 from STMicroelectronics stands out as a superior choice for designers seeking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.1064 $50.5536
51+ $1.9706 $100.5006
79+ $1.9026 $150.3054
114+ $1.7667 $201.4038
148+ $1.6988 $251.4224
184+ $1.6308 $300.0672
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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