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STF11N65M5

Part No STF11N65M5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 650V 9A TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 644pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 480 mOhm @ 4.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 1102942-STF11N65M5
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STF11N65M5 CAD Model

Description

STF11N65M5 - High Efficiency MOSFET by STMicroelectronics

The STF11N65M5 is a state-of-the-art N-channel 650 V MDmesh™ M5 series Power MOSFET designed and manufactured by STMicroelectronics. This device is specifically engineered to deliver high efficiency and reliability for a wide range of applications, including switch-mode power supplies (SMPS), lighting, welding, and high-performance converters.

Key Features

  • Advanced MDmesh™ M5 Technology: Utilizes the fifth generation of STMicroelectronics' innovative super-junction technology, which enables a significant reduction in on-resistance (R<sub>DS(on)) and total gate charge (Q<sub>g), leading to higher efficiency and lower switching losses.
  • High Voltage Capability: With a breakdown voltage of 650 V, the STF11N65M5 ensures a robust and reliable performance in high voltage applications, providing an extra margin of safety in systems subject to voltage surges or spikes.
  • Low Gate Charge: The device is designed with a focus on minimizing gate charge, which translates into faster switching speeds and reduced power dissipation during the switching cycle.
  • Reduced On-Resistance: Features a very low on-resistance, which results in lower conduction losses and improved overall efficiency, particularly in applications where low conduction losses are crucial.
  • Enhanced Thermal Performance: The STF11N65M5 benefits from an optimized package design for improved heat dissipation, ensuring stable performance even under high thermal conditions.

Applications

The versatility of the STF11N65M5 MOSFET makes it suitable for a broad range of high-efficiency applications, including:

  • High-efficiency switch-mode power supplies
  • LED lighting solutions
  • Power converters and inverters
  • Welding equipment
  • Motor control systems

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The STF11N65M5 MOSFET is built to meet stringent quality standards, ensuring reliable performance and a long operational lifespan for the end-user's application. This commitment to quality makes the STF11N65M5 an ideal choice for designers looking for a MOSFET that combines efficiency, reliability, and performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3456 $60.5520
105+ $1.1042 $115.9410
165+ $1.0695 $176.4675
225+ $1.0349 $232.8525
290+ $1.0002 $290.0580
390+ $0.8974 $349.9860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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