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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 950V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 51nC @ 10V
Max Input Capacitance 1620pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 850 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 1102946-STF13N95K3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STF13N95K3 CAD Model

Description

STF13N95K3 - STMicroelectronics N-Channel MOSFET

The STF13N95K3 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This device is part of STMicroelectronics' MDmesh™ K3 series, which is renowned for its energy efficiency and high switching performance.

With a drain-source voltage (V<sub>DS) of up to 950V, the STF13N95K3 is designed for applications that require reliable and efficient power conversion. This MOSFET features a very low on-resistance (R<sub>DS(on)) of 0.33 ohms, which enhances its overall efficiency by reducing conduction losses. The device's threshold voltage (V<sub>th) is specified at 4.0V, ensuring a good margin for logic-level compatibility.

The STF13N95K3 comes in a TO-220FP package, which is known for its robustness and excellent thermal performance, making it suitable for a wide range of applications, including switch mode power supplies (SMPS), lighting, motor control, and industrial applications. The package is designed to handle high currents and dissipate heat effectively, ensuring the MOSFET operates within its specified temperature range even under high power conditions.

One of the key features of the STF13N95K3 is its fast-switching capability, which is crucial for applications that require high-frequency operation. The device's low gate charge (Q<sub>g) and low input capacitance (C<sub>iss) contribute to its swift response times, reducing switching losses and improving the efficiency of the overall system.

STMicroelectronics has also incorporated enhanced avalanche ruggedness in the STF13N95K3, providing additional reliability under harsh operating conditions. This feature ensures that the MOSFET can withstand high energy pulses, making it a safe choice for applications that may experience unexpected voltage spikes.

In conclusion, the STF13N95K3 by STMicroelectronics is an excellent choice for designers looking for a high-voltage, high-efficiency, and fast-switching N-channel MOSFET. Its combination of robust package design, low on-resistance, and high switching performance make it a versatile component that can meet the demands of various power management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $12.8606 $51.4424
10+ $10.5523 $105.5230
15+ $10.2225 $153.3375
21+ $9.8928 $207.7488
27+ $9.5630 $258.2010
35+ $8.5737 $300.0795
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 4,000 pieces
MOQ: 4 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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