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STF20NM65N

Part No STF20NM65N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 15A TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 44nC @ 10V
Max Input Capacitance 1280pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 270 mOhm @ 7.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 005487-STF20NM65N
Popularity Medium
Supply and Demand Status Limited
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian STF20NM65N CAD Model

Description

The STF20NM65N is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This device is part of ST's MDmesh™ M5 series, which is renowned for its high efficiency and performance in a wide range of power applications.

Key Features

  • Advanced MDmesh™ M5 Technology: Utilizes the fifth generation of STMicroelectronics' innovative super-junction technology that optimizes the balance between on-resistance and capacitance to achieve high efficiency.
  • High Voltage Rating: With a drain-source voltage (V<sub>DS) of up to 650V, the STF20NM65N is suitable for high voltage applications, providing reliable operation and robust performance.
  • Low On-Resistance: Features an exceptionally low on-resistance (R<sub>DS(on)) value, minimizing conduction losses and improving overall device efficiency.
  • Improved Switching Performance: Its fast switching characteristics reduce switching losses, which is critical for high-frequency power conversion systems.
  • High Current Capability: With a continuous drain current (I<sub>D) of 20A, this MOSFET can handle significant power levels, making it ideal for demanding applications.
  • Reduced Gate Charge: A low total gate charge (Q<sub>g) helps to minimize driver losses and simplifies the drive circuitry.
  • 100% Avalanche Tested: Guarantees robustness and reliability by ensuring the device can withstand high-energy pulses in avalanche and commutation modes.

Applications

The STF20NM65N is highly versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • High-efficiency DC/DC converters
  • Power adapters
  • Solar inverters
  • Welding equipment

Package and Quality

This MOSFET is offered in a TO-220FP package, which is designed for optimal thermal performance and space-saving on the PCB. STMicroelectronics' commitment to quality ensures that the STF20NM65N meets the highest industry standards for performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $3.0205 $66.4510
53+ $2.4786 $131.3658
81+ $2.4009 $194.4729
112+ $2.3233 $260.2096
144+ $2.2469 $323.5536
193+ $2.0141 $388.7213
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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